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KIT8020CRD8FF1217P-1_UM Rev -
User Manual
Figure 10. Vgs, Inductor current IL and Vds waveforms at 9KW loading
(Ch1: low-side Vds yellow 200v/div); (Ch2: inductor current IL 10A/div);
(Ch3: low-side Vgs pink 10v/div); (Ch4: high-side Vgs green 10v/div)
The EVL board
’s
maximum efficiency in this configuration is around 98.9% at 4KW
half load using the Yokogawa WT3000 to measure it. It includes losses from the
inductor, switching devices, and capacitors. Considering the high switching frequency
(40kHz) and high duty cycle (50%), the efficiency is high compared to conventional Si
IGBT solutions.
Figure 11. Efficiency data for this EVL board
Figure 12 shows the thermal performance for this EVL board at full load 9KW after 30
minutes of continuous operation. The test condition is at room temperature with open
frame and 12W fan cooling the heatsink and inductor. It demonstrates high
performance of SiC MOSFET with low temperature, low losses and high switching
frequency.
Figure 12. Thermal imaging of the EVL board while under test.
