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AV02-4749EN - February 9, 2015
Figure 8. Turn-on & Turn-off Gate waveforms of Q1a & Q1b
As can be seen from Figures 7 and 8, the turn-off speed of the IGBT or SiC/GaN MOSFET will be quite slow, due to the
capacitive effects of D2 and the gate capacitance of Q1. To improve the turn-off speed, the board is equipped with diode
resistor pair footprints at D1 and R5 (not mounted NM) to increase the gate current during turn-off. The turn-on and
turn-off speed can be further improved by reducing the gate resistance of R4, however, care must be taken to ensure
that the gate drive current is not more than 2.5A.
Figure 8 shows the turn-on signal of IN1+, the turn-on signal at gate of Q1a and the turn-off signal at gate of Q1b.
Figure 7. Turn-off & Turn-on Gate waveforms of Q1a & Q1b
Figure 7 shows the turn-off signal of IN1+, the turn-off signal at gate of Q1a and the turn-on signal at gate of Q1b.
IN1+
Vgs (Q1a)
Vgs (Q1b)
IN1+
Vgs (Q1a)
Vgs (Q1b)
