ASROCK Super Alloy H170M PRO4, Руководство пользователя

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RAS# to CAS# Delay and Row Precharge (tRCDtRP) O
RAS# to CAS# Delay : he number of clock cycles required between the opening of
a row of memory and accessing columns within it.
Row Precharge: he number of clock cycles required between the issuing of the
precharge command and opening the next row.
RAS# Active Time (tRAS)
he number of clock cycles required between a bank active command and issuing the
precharge command.
Command Rate (CR)
he delay between when a memory chip is selected and when the irst active command can
be issued.
Secondary Timing
Write Recovery Time (tWR)
he amount of delay that must elapse ater the completion of a valid write operation,
before an active bank can be precharged.
Refresh Cycle Time (tRFC)
he number of clocks from a Refresh command until the irst Activate command to
the same rank.
RAS to RAS Delay (tRRD_L)
he number of clocks between two rows activated in diferent banks of the same
rank.
RAS to RAS Delay (tRRD_S)
he number of clocks between two rows activated in diferent banks of the same
rank.
Write to Read Delay (tWTR_L)
he number of clocks between the last valid write operation and the next read command to
the same internal bank.
Write to Read Delay (tWTR_S)
he number of clocks between the last valid write operation and the next read command to
the same internal bank.