Background
Page 9
© November 2008
Altera Corporation
AN 436: Using DDR3 SDRAM in Stratix III and Stratix IV Devices
IOE Registers
Stratix III IOE registers include the following feature enhancements, over the previous
generation of devices, which greatly simplify high speed memory interface design:
■
Single-ended or differential DQS signaling
■
Alignment and synchronization registers
■
Half data rate registers
■
I/O clock divider
■
Programmable delay
■
Read and write leveling—one per subbank. For example, bank 1a, 1b, and 1c =
three circuits
Figure 1.
PLL and DLL Locations and Resources in Stratix III Devices
PLL_T1
PLL_T2
PLL_B1
PLL_B2
8A
8B
8C
7C
7B
7A
3A
3B
3C
4C
4B
4A
2A
2B
2C
PLL_L3
PLL_L2
1C
1B
1A
PLL_R3
PLL_R2
5A
5B
5C
6C
6B
6A
6
6
6
6
6
6
6
6
DLL1
PLL_L1
RCLK[87:82]
RCLK[81:76]
RCLK[43:38]
RCLK[37:32]
GCLK[3:0]
GCLK[11:8]
Q2
Q1
Q4
Q3
RCLK[69:64]
RCLK[11:6]
RCLK[5:0]
GCLK[15:12]
GCLK[7:4]
RCLK[75:70]
RCLK[21:12]
RCLK[31:22]
DLL4
PLL_R1
DLL3
PLL_R4
DLL2
PLL_L4
RCLK[63:54]
RCLK[53:45]