194
MC95FG308 / MC95FG208
ABOV Semiconductor Co., Ltd.
(3) Write 0xA5 to 0xF555.
1
Refer to how to enter ISP mode..
2
Command sequence to activate Flash write/erase mode. It is composed of sequentially writing data of Flash memory.
15.4.1.3
Flash write mode
Step 1. Enable program mode.
Step 2. Reset page buffer. FEMR: 1000_0001 FECR:0000_0010
Step 3. Select page buffer. FEMR:1000_1001
Step 4. Write data to page buffer.(Address automatically increases by twin.)
Step 5. Set write mode. FEMR:1010_0001
Step 6. Set page address. FEARH:FEARM:FEARL=20’hx_xxxx
Step 7. Set FETCR.
Step 8. Start program. FECR:0000_1011
Step 9. Insert one NOP operation
Step 10. Read FESR until PEVBSY is 1.
Step 11. Repeat step2 to step 8 until all pages are written.
15.4.1.4
Flash page erase mode
Step 1. Enable program mode.
Step 2. Reset page buffer. FEMR: 1000_0001 FECR:0000_0010
Step 3. Select page buffer. FEMR:1000_1001
Step 4. Write ‘h00 to page buffer. (Data value is not important.)
Step 5. Set erase mode. FEMR:1001_0001
Step 6. Set page address. FEARH:FEARM:FEARL=20’hx_xxxx
Step 7. Set FETCR.
Step 8. Start erase. FECR:0000_1011
Step 9. Insert one NOP operation
Step 10. Read FESR until PEVBSY is 1.
Step 11. Repeat step2 to step 8 until all pages are erased.
15.4.1.5
Flash bulk erase mode
Step 1. Enable program mode.
Step 2. Reset page buffer. FEMR: 1000_0001 FECR:0000_0010
Step 3. Select page buffer. FEMR:1000_1001
Step 4. Write ‘h00 to page buffer. (Data value is not important.)
Step 5. Set erase mode. FEMR:1001_0001.
(Only main cell area is erased. For bulk erase including OTP area, select OTP area.(set FEMR to 1000_1101.)
Step 6. Set FETCR
Содержание MC95FG208 Series
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