Panasonic Zener Diodes MAYS0750Y, Specifications

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Zener Diodes
Publication date: February 2007 SKE00031AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MAYS0750Y
Silicon epitaxial planar type
For ESD protection of high speed signal line

Features

Maintain signal cobs with low insertion loss, distortion.

Absolute Maximum Ratings T
a
= 25 ° C
Parameter Symbol Rating Unit
Total power dissipation *1 P
T
150 mW
Junction temperature T
j
150 ° C
Storage temperature T
stg
–55 to +150 ° C
Electrostatic discharge *2 ESD ± 8 kV
Note) *1 : P
T
= 150 mW achieved with a printed circuit board.
*2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330 W , Contact discharge: 10 times)

Electrical Characteristics T
a
= 25 ° C ± 3 ° C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage * V
BR
I
R
= 1 mA 6.0 7.5 V
Reverse current I
R
V
R
= 5 V 2 m A
Terminal capacitance C
t
I
R
= 0 V, f = 1 MHz 0.8 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *: V
Z
guaranted 20 ms after current fl ow.
Marking Symbol: CY
Unit: mm
1: Anode
2: Cathode
EIAJ: SC-79 SSMini2-F1 Package
0.80
+0.05
–0.03
0.60
+0.05
–0.03
0.12
+0.05
–0.02
1.20
+0.05 –0.03
0
+0
–0.05
0.30
± 0.05
0.01
± 0.01
1.60
±
0.05
0.01
±
0.01
1
2
0.80
±
0.05
(0.80
)
(0.60
)
(0.15
)
(0.60
)
5
°
5 °