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Zener Diodes 

Publication date: April 

2006

 

SKE

00022

CED 

1

MALS068X

Silicon planar type

For constant voltage and surge absorption circuits

 Features

 Bi-directional and high electrostatic discharge ESD


 Small terminal capacitance C

t

 Absolute Maximum Ratings  

T

a

 = 

25

aa

°

C

Parameter

Symbol

Rating

Unit

Repetitive peak forward current

I

FRM

200

mA

Total power dissipation 

*

1

P

T

150

mW

Junction temperature

T

j

TT

150

°

C

Storage temperature

T

stg

TT

55

 to +

150

°

C

Electrostatic discharge 

*

2

ESD

±

15

kV

Note) *

1

 : P

T

 = 

150

 mW achieved with a printed circuit board.

*

2

 : Test method: IEC

61000

-

4

-

2

 

    (C = 

150

 pF, R = 

330

 

, Contact discharge: 

10

 times)

 Electrical Characteristics   

T

a

 = 

25

aa

°

C

±

3

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Zener voltage 

*

V

Z

V

V

I

Z

 = 

5

 mA

ZZ

6

.

5

7

.

0

7

.

5

V

Zener operating resistance

R

Z

R

R

I

Z

 = 

5

 mA

ZZ

20

Reverse current

I

R

V

R

 = 

4

.

0

 V

R

R

50

nA

Terminal capacitance

C

t

V

R

 = 

0

 V, f = 

1

 MHz

R

R

15

pF

Note) 

1

. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 

7031

 measuring methods for diodes.

 

2

. The temperature must be controlled 

25

°

C for V

Z

 mesurement.

 

  V

Z

 value measured at other temperature must be adjusted to V

Z

 (

25

°

C)

 

3

. *: V

Z

 guaranted 

20

 ms after current fl ow.

Unit : mm

1 : Cathode

2 : Cathode

EIAJ : SC-79 

SSMini2-F1 Package

0.80

+0.05

–0.03

0.60

+0.05

–0.03

0.12

+0.05

–0.02

1.20

+0.05 –0.03

0

+0

–0.05

0.30

±

0.05

0.01

±

0.01

1.60

±

0.05

0.01

±

0.01

1

2

0.80

±

0.05

(0.80

)

(0.60

)

(0.15

)

(0.60

)

5

°

5

°

 RX

Internal Connection

1

2

This product complies with the RoHS Directive (EU 2002/95/EC).

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