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Transistors
1
Publication date: November 2004
SJC00312BED
2SA2161J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6037J
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−
15
V
Collector-emitter voltage (Base open)
V
CEO
−
12
V
Emitter-base voltage (Collector open)
V
EBO
−
5
V
Collector current
I
C
−
500
mA
Peak collector current
I
CP
−
1
A
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
−
10
µ
A, I
E
=
0
−
15
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
−
1 mA, I
B
=
0
−
12
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
−
10
µ
A, I
C
=
0
−
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
−
15 V, I
E
=
0
−
0.1
µ
A
Forward current transfer ratio
h
FE
V
CE
=
−
2 V, I
C
=
−
10 mA
270
680
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
−
200 mA, I
B
=
−
10 mA
−
250
mV
Transition frequency
f
T
V
CB
=
−
2 V, I
E
=
10 mA, f
=
200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
4.5
pF
(Common base, input open circuited)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Marking Symbol: 2U
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
1: Base
2: Emitter
3: Collector
EIAJ: SC-89, JEDEC: SOT-490
SSMini3-F1 Package
0.27
±
0.02
3
1
2
0.12
+0.03
–0.01
0.80
±
0.05
(0.80)
0.85
1.60
±
0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00
±
0.05
(0.50)(0.50)
+0.05 –0.03
This product complies with the RoHS Directive (EU 2002/95/EC).