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1
Transistor
2SC5378
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
■
Features
●
Low noise figure NF.
●
High gain.
●
High transition frequency f
T
.
●
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■
Absolute Maximum Ratings
(Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC–70
3:Collector
S–Mini Type Package
2.1
±
0.1
1.3
±
0.1
0.9
±
0.1
0.7
±
0.1
0.3
+0.1
–0
0.15
+0.1
–0.05
2.0
±
0.2
1.25
±
0.1
0.425
0.425
1
3
2
0.65
0.2
0.65
0 to 0.1
0.2
±
0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
8
2
80
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
■
Electrical Characteristics
(Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Noise figure
Foward transfer gain
Symbol
I
CBO
I
EBO
h
FE
*1
C
ob
f
T
NF
| S
21e
|
2
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CB
= 5V, I
E
= 0, f = 1MHz
V
CE
= 5V, I
C
= 10mA, f = 2GHz
V
CE
= 5V, I
C
= 3mA, f = 1GHz
V
CE
= 5V, I
C
= 10mA, f = 1GHz
min
80
8.5
typ
0.6
7
1.6
11
max
1
1
200
1
2
Unit
µ
A
µ
A
pF
GHz
dB
dB
*1
h
FE
Rank classification
Rank
Q
R
S
h
FE
80 ~ 115
95 ~ 155
135 ~ 200
Marking symbol :
HT
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please visit following URL about latest information.
http://panasonic.net/sc/en