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1

Transistor

2SC5378

Silicon NPN epitaxial planer type

For low-voltage low-noise high-frequency oscillation

Features

Low noise figure NF.

High gain.

High transition frequency f

T

.

S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings  

(Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base
2:Emitter

EIAJ:SC–70

3:Collector

S–Mini Type Package

2.1

±

0.1

1.3

±

0.1

0.9

±

0.1

0.7

±

0.1

0.3

+0.1

–0   

0.15

+0.1  

–0.05

2.0

±

0.2

1.25

±

0.1

0.425

0.425

1

3

2

0.65

0.2

0.65

0 to 0.1

0.2

±

0.1

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

15

8

2

80

150

150

–55 ~ +150

Unit

V

V

V

mA

mW

˚C

˚C

Electrical Characteristics  

(Ta=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Collector output capacitance

Transition frequency

Noise figure

Foward transfer gain

Symbol

I

CBO

I

EBO

h

FE

*1

C

ob

f

T

NF

| S

21e

 |

2

Conditions

V

CB

 = 10V, I

E

 = 0

V

EB

 = 1V, I

C

 = 0

V

CE

 = 5V, I

C

 = 10mA

V

CB

 = 5V, I

E

 = 0, f = 1MHz

V

CE

 = 5V, I

C

 = 10mA, f = 2GHz

V

CE

 = 5V, I

C

 = 3mA, f = 1GHz

V

CE

 = 5V, I

C

 = 10mA, f = 1GHz

min

80

8.5

typ

0.6

7

1.6

11

max

1

1

200

1

2

Unit

µ

A

µ

A

pF

GHz

dB

dB

*1

h

FE

 Rank classification

Rank

Q

R

S

h

FE

80 ~ 115

95 ~ 155

135 ~ 200

Marking symbol :

HT

Ma

int

en

an

ce

/

Dis

co

nti

nu

ed

Please visit following URL about latest information.

http://panasonic.net/sc/en

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