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Switching Diodes

1

Publication date:  November 2003

SKF00033CED

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

80

V

Maximum peak reverse voltage

V

RM

80

V

Forward current

Single

I

F

100

mA

Double

150

Peak forward

Single

I

FM

225

mA

current

Double

340

Non-repetitive peak

Single

I

FSM

500

mA

forward surge current 

*

Double

750

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

55 to

 +

150

°

C

MA3X152D

 (MA152WA)

, MA3X152E

 (MA152WK)

Silicon epitaxial planar type

For high-speed switching circuits

Features

Short reverse recovery time t

rr

Small terminal capacitance, C

t

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

 

=

 100 mA

1.2

V

Reverse voltage

V

R

I

R

 

=

 100 

µ

A

80

V

Reverse current

I

R

V

R

 

=

 75 V

100

nA

Terminal capacitance

MA3X152D

C

t

V

R

 

=

 0 V, f 

=

 1 MHz

15

pF

MA3X152E

2

Reverse recovery time 

*

MA3X152D

t

rr

I

F

 

=

 10 mA, V

R

 

=

 6 V

10

ns

MA3X152E

I

rr

 

=

 0.1 I

R

 , R

L

 

=

 100 

3

Electrical Characteristics

  T

a

 

=

 25

°

±

 3

°

C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.

2. Absolute frequency of input and output is 100 MHz.

3. *: t

rr

 measurement circuit

Bias Application Unit N-50BU

90%

Pulse Generator
(PG-10N)
R

s

 

=

 50 

Wave Form Analyzer
(SAS-8130)
R

i

 

=

 50 

t

p

 

=

 2 

µ

s

t

r

 

=

 0.35 ns

δ

 

=

 0.05

I

F

 

=

 10 mA

V

R

 

=

 6 V

R

L

 

=

 100 

10%

Input Pulse

Output Pulse

I

rr

 

=

 0.1 I

R

t

r

t

p

t

rr

V

R

I

F

t

t

A

EIAJ: SC-59
Mini3-G1 Package

Marking Symbol

 MA3X152D: 

MO

 MA3X152E: 

MU

Internal Connection

D

E

MA3X152D MA3X152E

1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode1, 2 Cathode 1, 2

Unit: mm

0.40

+0.10

–0.05

(0.65)

1.50

+0.25 –0.05

2.8

+0.2 –0.3

2

1

3

(0.95) (0.95)

1.9

±

0.1

2.90

+0.20

–0.05

0.16

+0.10

–0.06

0.4

±

0.2

10˚

0 to 0.1

1.1

+0.2 –0.1

1.1

+0.3 –0.1

Note) *: t 

=

 1 s

Note) The part numbers in the parenthesis show conventional part number.

1

2

3

1

2

3

This product complies with the RoHS Directive (EU 2002/95/EC).

Summary of Contents for MA3X152D

Page 1: ... Reverse recovery time MA3X152D trr IF 10 mA VR 6 V 10 ns MA3X152E Irr 0 1 IR RL 100 Ω 3 Electrical Characteristics Ta 25 C 3 C Note 1 Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes 2 Absolute frequency of input and output is 100 MHz 3 trr measurement circuit Bias Application Unit N 50BU 90 Pulse Generator PG 10N Rs 50 Ω Wave Form Analyzer SAS 81...

Page 2: ...verse current I R µA Ta 125 C 75 C 25 C 0 1 2 1 0 0 8 0 6 0 4 0 2 40 0 40 80 120 160 Ambient temperature Ta C Forward voltage V F V IF 10 mA 1 mA 3 mA 0 1 mA 10 4 40 0 40 80 120 160 10 3 10 2 10 1 1 10 Ambient temperature Ta C Reverse current I R µA VR 80 V 40 V 10 1 10 1 0 10 20 30 40 50 60 Reverse voltage VR V Terminal capacitance C t pF f 1 MHz Ta 25 C Characteristics chart of MA3X152D This pro...

Page 3: ...verse current I R µA Ta 125 C 75 C 25 C 0 1 2 1 0 0 8 0 6 0 4 0 2 40 0 40 80 120 160 Ambient temperature Ta C Forward voltage V F V IF 10 mA 1 mA 3 mA 0 1 mA 10 3 40 0 40 80 120 160 10 2 10 1 1 10 102 Ambient temperature Ta C Reverse current I R µA VR 80 V 40 V 10 1 10 1 0 10 20 30 40 50 60 Reverse voltage VR V Terminal capacitance C t pF f 1 MHz Ta 25 C Characteristics chart of MA3X152E This prod...

Page 4: ...ard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing your equipmen...

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