Transistors
1
Publication date: January 2003
SJC00208BED
2SD1149
Silicon NPN epitaxial planar type
For low-frequency amplification
■
Features
•
High forward current transfer ratio h
FE
•
Low collector-emitter saturation voltage V
CE(sat)
•
High emitter-base voltage (Collector open) V
EBO
•
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
100
V
Collector-emitter voltage (Base open)
V
CEO
100
V
Emitter-base voltage (Collector open)
V
EBO
15
V
Collector current
I
C
20
mA
Peak collector current
I
CP
50
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
µ
A, I
E
=
0
100
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
1 mA, I
B
=
0
100
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
µ
A, I
C
=
0
15
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
60 V, I
E
=
0
0.1
µ
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
60 V, I
B
=
0
1.0
µ
A
Forward current transfer ratio
*
h
FE
V
CE
= 10 V, I
C
= 2 mA
400
1 200
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
10 mA, I
B
=
1 mA
0.05
0.20
V
Transition frequency
f
T
V
CB
=
10 V, I
E
=
−
2 mA, f
=
200 MHz
100
MHz
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
Rank
R
S
h
FE
400 to 800
600 to 1 200
Marking symbol
：
1V
This product complies with the RoHS Directive (EU 2002/95/EC).
