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Transistors
Publication date : October 2008
SJC00417AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0792A
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise ampli
fi
cation
Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
–185
V
Collector-emitter voltage (Base open)
V
CEO
–185
V
Emitter-base voltage (Collector open)
V
EBO
–5
V
Collector current
I
C
–50
mA
Peak collector current
I
CP
–100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= –100
m
A, I
B
= 0
–185
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= –10
m
A, I
C
= 0
–5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= –100 V, I
E
= 0
–1
m
A
Forward current transfer ratio
*
h
FE
V
CE
= –5 V, I
C
= –10 mA
130
330
Collector-emitter saturation voltage
V
CE(sat)
I
C
= –30 mA, I
B
= –3 mA
–1
V
Transition frequency
f
T
V
CB
= –10 V, I
E
= 10 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= –10 V, I
E
= 0, f = 1 MHz
4
pF
Noise voltage
NV
V
CB
= –10 V, I
C
= –1 mA, G
V
= 80 dB,
R
g
= 100 k
Ω
, Function = FLAT
150
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
h
FE
130 to 220
185 to 330
Merking symbol
2FR
2FS
Package
Code
Mini3-G1
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: 2F