ECO NO:
DATE:
APPROVED:
REVISION RECORD
LTR
A
D
C
6
A
B
C
D
5
4
3
2
1
B
SCALE:
SHEET: OF
DRAWING NO:
TITLE:
COMPANY:
RELEASED:
DATED:
DATED:
QUALITY CONTROL:
CHECKED:
DATED:
DATED:
DRAWN:
CODE:
SIZE:
REV:
23
15
<Scale>
<Revision>
<Drawing Number>
A0
<Code>
<Title>
<Company Name>
<Release Date>
<QC Date>
<Checked Date>
<Drawn Date>
<Released By>
<QC By>
<Checked By>
<Drawn By>
Note 41-1:
The equivalent capacitance of ESD protection device must be <=1pF
-- otherwise it will result in NFC card mode function fail.
Schematic design notice of "41_MEMORY_SD Card" page.
Note 41-2:
Depends on system design to add ESD protection componemt or not.
16V
[5]
[4]
[6,7,11,12,15]
REGN [15]
VBAT [6,7,11,12,15]
[15]
[2,3,5,6,7,9,10,11,14,16,18,19,20,21,23]
[7,22]
[6,7,8,9,18,19,20,21,22]
[5,8,20,21]
[5,8,20,21]
[6,7]
VBUS_USB_IN
VSYS
仪和重力加速
VBTT
Summary of Contents for Redmi note3
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