MDC901-EVBHB Rev2021Jan5
MinDCet NV
Attention: Please refer to Evaluation Kit Important Notice on page 20
Page 5
Overview
The evaluation board (EVB) is designed in a half bridge configuration for step-down conversion. One
MinDCet MDC901 GaN gate driver is present driving two GaN Systems GS61008P 100V enhancement mode
high mobility transistors (e-HEMT).
The EVB is broken down into blocks for description purposes, as displayed in Figure 2.
MDC901 200V GaN Gate Driver
The MDC901 gate driver IC is a QFN56 7x7mm² package for precise driving of the GaN transistors.
For specifications and more information, refer to the most recent datasheet at
https://www.mindcet.com/asic-products
100V E-Mode GaN Transistors
(2) GaN Systems GS61008P enhancement mode GaN HEMTs, with a V
DS
rating of 100V, are present
on board as high and low side power switches in the half-bridge. The GS61008P has a size of 7.5 x 4.6 x
0.51mm³ and R
DS(ON)
of 8 mΩ. The GaN HEMTs leverage GaN’s properties for high power densities with high
voltage breakdown and high switching frequency.
For specifications and more information, refer to the most recent datasheet at
https://www.gansystems.com/gan-transistors/gs61008p
GaN Half-Bridge Solution Size
The entire GaN half-bridge, including the (2) GaN HEMTs, (1) MDC901 gate driver, and required
surrounding passives, has a highly compact footprint of 20x21mm².
Figure 2: EVB layout description based, labeled by key aspects
