K465i Operations and Maintenance
P/N 1212831 Rev C
Page 3-3
Copyright
©
2012
Veeco Instruments, Inc. Confidential
All Rights Reserved
Section 3.1.
System Function and Usage
In MOCVD production of GaN (Gallium-nitride) -based materials for FETs or LEDs, the K465i
GaN offers a unique set of features and functions. The K465i GaN utilizes Veeco’s TurboDisc
technology for wafer growth, employing controlled wafer rotation within the growth
chamber. The growth chamber/chemical reactor has ports and devices allowing control over
fast gas switching and rapid temperature ramping. In-situ monitoring (DRT) provides real-
time analysis of wafer temperature and growth rates. There is also a Transfer Housing
(
loadlock
) system for high, safe throughput, and extensive cooling and exhaust systems for
safety and system longevity.
Figure 3-3. K465i GaN System Assembly
The K465i GaN depicted in Figure 3-3 above can be used for blue, green and ultraviolet
(UV) LEDs, solar cells, FETs and blue spectrum laser production.
The K465i GAN is divided into separate modules, assembled separately on separate wheeled
frames, then mounted together, placed on metal feet and the casters are removed. The
modules are:
Electrical/Circuit Breaker Power (CBP)
Electronics Circuit Assembly (for common subsystems)/Power Supply Module
