Veeco Dimension 3100, Manual, Page: 113 / 376

Cantilever Preparation
Silicon Nitride Cantilever Substrates
Rev. D Dimension 3100 Manual 93
In addition to microscopic scale shape characteristics (see Figure 6.1b - Figure 6.1e ), another factor
which can affect the wall angle over shorter (nominal 100 nm) step height measurements is the
shaped cusp at the end of the tip. The shaped cusp at the end of the tip is formed to increase the
sharpness of the tip point to a length of 100 nm from the end of the tip. It is formed in such a
manner that the radius of curvature of a silicon tip can be in the range of 5 – 10nm (on a very good
tip).
6.2 Silicon Nitride Cantilever Substrates
The following procedure details how to remove Silicon Nitride cantilever substrates.
1. Verify that the wafer is oriented with the tips facing upward (gold coated surface down).
2. Inspect the wafer with an optical microscope.
Note: A 10 -70X stereo microscope is useful for becoming familiar with the styles
and orientation of the cantilevers on the probe substrate. Included with the
AFM microscope is a tool kit containing: wafer tweezers, substrate tweezers,
regular tweezers, and a pin-vise.
3. Remove the Pyrex strips by resting the silicon ring on a glass slide or ruler.
4. Apply downward pressure with the tweezers until the strip breaks free from the silicon ring
(see Figure 6.2a ).
Figure 6.2a Silicon Nitride Cantilevers in a Wafer
Position glass slide underneath
Press here to break out strip
for support