Toshiba TPC8402 Handbook Download Page 7

TPC8402 

2006-11-13 

7

P-ch 

 

 

 

 

 

 

 

 

 

r

th

 

 t

w

 

PULSE WIDTH    t

w

    (s) 

 

T

R

AN

SI

E

N

T

 T

H

ER

M

A

L I

M

P

E

D

AN

C

E

 

r

th

  (

°C

/W

 

 

0.1 

0.001

0.01 

0.1

10 

100

1000 

0.3 

0.5 

10 

30 

50 

100 

300 

1000 

500 

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) 
  (1)  SINGLE-DEVICE OPERATION (NOTE 3a) 
  (2)    SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) 

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) 
  (3)  SINGLE-DEVICE OPERATION (NOTE 3a) 
  (4)    SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b)

(1)

SINGLE PULSE 

(2)

(3)

(4)

Summary of Contents for TPC8402

Page 1: ...e operation Note 3a PD 1 0 75 0 75 Drain power dissipation t 10s Note 2b Single device value at dual operation Note 3b PD 2 0 45 0 45 W Single pulse avalanche energy EAS 26 3 Note 4a 32 5 Note 4b mJ Avalanche current IAR 4 5 5 A Repetitive avalanche energy Single device value at operation Note 2a Note 3b Note 5 EAR 0 10 mJ Channel temperature Tch 150 C Storage temperature range Tstg 55 150 C Note ...

Page 2: ...lues shown are for a single device During single device operation power is applied to one device only b The power dissipation and thermal resistance values shown are for a single device During dual operation power is applied to both devices evenly Note 4 a VDD 24 V Tch 25 C Initial L 1 0 mH RG 25 Ω IAR 4 5 A b VDD 24 V Tch 25 C Initial L 1 0 mH RG 25 Ω IAR 5 0 A Note 5 Repetitive rating pulse widt...

Page 3: ...V ID 2 2 A 27 35 mΩ Forward transfer admittance Yfs VDS 10 V ID 2 2 A 3 5 7 S Input capacitance Ciss 970 Reverse transfer capacitance Crss 180 Output capacitance Coss VDS 10 V VGS 0 V f 1 MHz 370 pF Rise time tr 17 Turn on time ton 20 Fall time tf 75 Switching time Turn off time toff 160 ns Total gate charge gate source plus gate drain Qg 28 Gate source charge 1 Qgs1 6 Gate drain miller charge Qgd...

Page 4: ...A 37 50 mΩ Forward transfer admittance Yfs VDS 10 V ID 2 5 A 3 6 S Input capacitance Ciss 475 Reverse transfer capacitance Crss 85 Output capacitance Coss VDS 10 V VGS 0 V f 1 MHz 270 pF Rise time tr 10 Turn on time ton 16 Fall time tf 13 Switching time Turn off time toff 70 ns Total gate charge gate source plus gate drain Qg 16 Gate source charge 1 Qgs1 11 Gate drain miller charge Qgd VDD 24 V VG...

Page 5: ...TPC8402 2006 11 13 5 P ch Drain current ID A RDS ON ID Drain source voltage R DS ON mΩ VGS 4 V VGS 10 V 0 1 1 100 10 100 5 30 50 10 0 3 3 30 300 500 Common source Ta 25 C Pulse test ...

Page 6: ...E OPERATION NOTE 3a 2 SINGLE DEVICE VALUE AT DUAL OPERATION NOTE 3b DEVICE MOUNTED ON A GLASS EPOXY BOARD b NOTE 2b 3 SINGLE DEVICE OPERATION NOTE 3a 4 SINGLE DEVICE VALUE AT DUAL OPERATION NOTE 3b t 10 s Ambient temperature Ta C RDS ON Ta Drain source ON resistance R DS ON mΩ 80 40 0 40 80 160 120 0 20 40 60 80 Common source Pulse test 2 2 A ID 4 5 A 1 3 A ID 4 5 A 2 2 A 10 V 1 3 A VGS 4 V ...

Page 7: ... 1 0 3 0 5 3 5 10 30 50 100 300 1000 500 DEVICE MOUNTED ON A GLASS EPOXY BOARD a NOTE 2a 1 SINGLE DEVICE OPERATION NOTE 3a 2 SINGLE DEVICE VALUE AT DUAL OPERATION NOTE 3b DEVICE MOUNTED ON A GLASS EPOXY BOARD b NOTE 2b 3 SINGLE DEVICE OPERATION NOTE 3a 4 SINGLE DEVICE VALUE AT DUAL OPERATION NOTE 3b 1 SINGLE PULSE 2 3 4 ...

Page 8: ...TPC8402 2006 11 13 8 N ch ...

Page 9: ... 100 150 200 0 5 1 0 1 5 2 0 4 3 DEVICE MOUNTED ON A GLASS EPOXY BOARD a NOTE 2a 1 SINGLE DEVICE OPERATION NOTE 3a 2 SINGLE DEVICE VALUE AT DUAL OPERATION NOTE 3b DEVICE MOUNTED ON A GLASS EPOXY BOARD b NOTE 2b 3 SINGLE DEVICE OPERATION NOTE 3a 4 SINGLE DEVICE VALUE AT DUAL OPERATION NOTE 3b t 10 s ...

Page 10: ... 1 0 3 0 5 3 5 10 30 50 100 300 1000 500 DEVICE MOUNTED ON A GLASS EPOXY BOARD a NOTE 2a 1 SINGLE DEVICE OPERATION NOTE 3a 2 SINGLE DEVICE VALUE AT DUAL OPERATION NOTE 3b DEVICE MOUNTED ON A GLASS EPOXY BOARD b NOTE 2b 3 SINGLE DEVICE OPERATION NOTE 3a 4 SINGLE DEVICE VALUE AT DUAL OPERATION NOTE 3b 1 SINGLE PULSE 2 3 4 ...

Page 11: ...s are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications Also please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices or TOSHIBA Semiconductor Reliability Handbook etc The TOSHIBA products listed in this document are intended for usage in general electronics applications computer personal equip...

Reviews: