Toshiba TPC8402, Handbook

Page: 3 / 11

TPC8402
2006-11-13 3
P-ch
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min. Typ. Max. Unit
Gate leakage current I
GSS
V
GS
= ±16 V, V
DS
= 0 V — — ±10 µA
Drain cut − off current I
DSS
V
DS
= − 30 V, V
GS
= 0 V — — − 10 µA
V
(BR) DSS
I
D
= − 10 mA, V
GS
= 0 V − 30 — —
Drain − source breakdown voltage
V
(BR) DSX
I
D
= − 10 mA, V
GS
= 20 V − 15 — —
V
Gate threshold voltage V
th
V
DS
= − 10 V, I
D
= − 1 mA − 0.8 — − 2.0 V
R
DS (ON)
V
GS
= − 4 V, I
D
= − 2.2 A — 55 65
Drain − source ON resistance
R
DS (ON)
V
GS
= − 10 V, I
D
= − 2.2 A — 27 35
m Ω
Forward transfer admittance |Y
fs
| V
DS
= − 10 V, I
D
= − 2.2 A 3.5 7 — S
Input capacitance C
iss
— 970 —
Reverse transfer capacitance C
rss
— 180 —
Output capacitance C
oss
V
DS
= − 10 V, V
GS
= 0 V, f = 1 MHz
— 370 —
pF
Rise time t
r
— 17 —
Turn − on time t
on
— 20 —
Fall time t
f
— 75 —
Switching time
Turn − off time t
off
— 160 —
ns
Total gate charge (gate − source
plus gate − drain)
Q
g
— 28 —
Gate − source charge 1 Q
gs1
— 6 —
Gate − drain (“miller”) charge Q
gd
V
DD
≈ − 24 V, V
GS
= − 10 V, I
D
= − 4.5 A
— 12 —
nC
Source − Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min. Typ. Max. Unit
Drain reverse
current
Pulse (Note 1) I
DRP
— — — − 18 A
Forward voltage (diode) V
DSF
I
DR
= − 4.5 A, V
GS
= 0 V — — 1.2 V