January 2001
2001 Fairchild Semiconductor International
Si9933ADY Rev A(W)
Si9933ADY
Dual P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
•
Load switch
•
Motor drive
•
DC/DC conversion
•
Power management
Features
•
–5 A, –20 V,
R
DS(ON)
= 75 m
Ω
@ V
GS
= –4.5 V
R
DS(ON)
= 105 m
Ω
@ V
GS
= –3.0 V
R
DS(ON)
= 115 m
Ω
@ V
GS
= –2.7 V
•
Extended V
GSS
range (
±
12V) for battery applications
•
Low gate charge
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
–20
V
V
GSS
Gate-Source Voltage
±
12
V
I
D
Drain Current
– Continuous
(Note 1a)
–3.4
A
– Pulsed
–16
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
P
D
(Note 1c)
0.9
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +175
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°
C/W
R
θ
J C
Thermal Resistance, Junction-to-Case
(Note 1)
40
°
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
9933A
Si9933ADY
13’’
12mm
2500 units
S
i993
3A
DY
