THERMAL DATA
TO-220
ISOWATT220
R
thj-cas e
Thermal Resist ance Junct ion-case
Max
1
2. 78
o
C/W
R
thj- amb
R
t hc- sin k
T
l
Thermal Resist ance Junct ion-ambient
Max
Thermal Resist ance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Uni t
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
6.5
A
E
AS
Single Pulse Avalanche Energy
(st arting T
j
= 25
o
C, I
D
= I
AR
, V
D D
= 50 V)
215
mJ
E
AR
Repet itive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
9.5
mJ
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
4.3
A
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
( BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
µ
A
V
G S
= 0
600
V
I
DS S
Zero Gate Volt age
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
T
c
= 125
o
C
25
250
µ
A
µ
A
I
G SS
Gate-body Leakage
Current (V
D S
= 0)
V
GS
=
±
30 V
±
100
nA
ON (
∗
)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
G S(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
µ
A
2. 25
3
3. 75
V
R
DS( on)
St atic Drain-source On
Resist ance
V
GS
= 10V
I
D
= 3 A
1
1.2
Ω
I
D( on)
On St ate Drain Current
V
DS
> I
D( on)
x R
D S(on) max
V
GS
= 10 V
6.5
A
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
g
fs
(
∗
)
Forward
Transconductance
V
DS
> I
D( on)
x R
D S(on) max
I
D
= 3 A
3.5
5.6
S
C
iss
C
oss
C
rss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
G S
= 0
1150
155
40
1550
210
55
pF
pF
pF
STP6NA60/FI
2/10
