STP6NA60
STP6NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
■
TYPICAL R
DS(on)
= 1
Ω
■
±
30V GATE TO SOURCE VOLTAGE RATING
■
100% AVALANCHE TESTED
■
REPETITIVE AVALANCHE DATA AT 100
o
C
■
LOW INTRINSIC CAPACITANCES
■
GATE GHARGE MINIMIZED
■
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized
cell
layout
coupled
with
a
new
proprietary edge termination concur to give the
device low R
DS(on)
and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SWITCH MODE POWER SUPPLIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS ( on)
I
D
STP6NA60
STP6NA60FI
600 V
600 V
< 1. 2
Ω
< 1. 2
Ω
6.5 A
3.9 A
1
2
3
TO-220
ISOWATT220
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
STP6NA60
STP6NA60FI
V
D S
Drain-source Voltage (V
GS
= 0)
600
V
V
DG R
Drain-gate Volt age (R
G S
= 20 k
Ω
)
600
V
V
GS
Gate-source Voltage
±
30
V
I
D
Drain Current (cont inuous) at T
c
= 25
o
C
6.5
3.9
A
I
D
Drain Current (cont inuous) at T
c
= 100
o
C
4.3
2.6
A
I
D M
(
•
)
Drain Current (pulsed)
26
26
A
P
tot
Total Dissipation at T
c
= 25
o
C
125
45
W
Derating Factor
1
0.36
W/
o
C
V
ISO
I nsulat ion Withstand Voltage (DC)
2000
V
T
stg
St orage Temperat ure
-65 to 150
o
C
T
j
Max. Operat ing Junction Temperature
150
o
C
(
•
) Pulse width limited by safe operating area
1
2
3
1/10
