Texas Instruments LM74701-Q1EVM, User Manual

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1 Introduction
The LM74701-Q1 evaluation module (LM74701-Q1EVM) helps designers evaluate the operation and
performance of the LM74701-Q1 ideal diode controller with integrated VDS clamp. This evaluation module
demonstrates how an N-channel power MOSFET can emulate a very-low forward voltage diode with low I
Q
and low-leakage current flowing through the IC. In this design scheme, the LM74701-Q1 is combined with a
MOSFET and used in series with a battery as a replacement for a Schottky diode and PFET, in reverse-polarity
protection circuitry as shown in
Figure 2-1 . For more information on the LM74701-Q1 functional and electrical
characteristics, see LM74701-Q1 "TVS Less" Low IQ Reverse Battery Protection Ideal Diode Controller data
sheet.
2 Setup
This section describes the jumpers and connectors on the EVM, and how to properly connect, setup, and use
the LM74701-Q1EVM. Ensure the power supply is turned off while making connections on the board.
2.1 I/O Connector Description
VIN J1: Power input connector to the positive rail of the input power supply
GND1 J3: Ground connection for the power supply
VOUT J2: Power output connector to the positive side of the load
GND2 J4: Ground connection for the load
EN J5: Jumper to enable LM74701-Q1 gate driver
1-2 position connects EN to Anode, 2-3 position connects EN to GND
Test Points VINA, VOUTA,GATE,ENA,BATT_MON, GND1, and GND2 are test points
GND
GATE
ANODE
EN
VBAT
ON OFF
SW
LM74701-Q1
VOUT
R
2
R
1
BATT_MON
CATHODE
VCAP
Voltage
Regulator
Figure 2-1. LM74701-Q1EVM Typical Application Circuit
Introduction www.ti.com
2 LM74701-Q1EVM User Guide SNOU180A – JUNE 2021 – REVISED SEPTEMBER 2021
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