Teac TFT IDTV, Service Manual

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22” TFT TV Service Manual 13/10/2004
11.25. IRF7314
11.25.1. General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple
devices can be used in an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques.
11.25.2. Features
•
Generation V Technology
•
Ultra Low On-Resistance
•
Dual P-Channel MOSFET
•
Surface Mount
•
Fully Avalanche Rated
11.25.3. Pin Description