Chapter 4: AMI BIOS
4-25
Memory Frequency
This option selects the type/speed of the memory installed. The
options are DDR3-1066MHz, DDR3-1333MHz, DDR3-1600MHz,
DDR3-1800MHz, DDR3-2000MHz, DDR-2200MHz, DDR-2400MHz,
and DDR-2600MHz.
Default speed is auto detected.
Memory Voltage
This option selects the Memory Voltag The options are
Auto
, 1.45V,
1.50V, 1.55V, 1.60V, 1.65V, 1.70V, 1.75V, 1.80V, 1.85V, and 1.95V.
Memory Timing Configuration (Expert Mode)
CAS# Latency (tCL)
This option configures the Cas Latency Range. Enter a number
between 4-18. The default is
9
.
Row Precharge Time (tRP)
This option selects the Ras Precharge Range. Enter a number be-
tween 1-38. The default is
11
.
RAS# to CAS# Delay (tRCD)
This option configures the Row to Col Delay Range. Enter a number
between 1-38. The default is
11
.
RAS# Active Time (tRAS)
This option selects the Ras Active Time. Enter a number between
1-586. The default is
28
.
Command Rate (CR)
This option sets the delay between when a memory chip is selected
and when the first active command canbe issued.
Write Recovery Time (tWR)
This feature sets the amount of delay that must elapse after the
completion of a valid write operation,before an active bank can be
precharged
Row Refresh Cycle Time (tRFC)
This feature sets the number of clocks from a Refresh command until
the first Activate command to the same rank
