STMicroelectronics STM32L100RC, Manual

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STM32L100RC
96
6.3.3 Embedded internal reference voltage
The parameters given in Table 15 are based on characterization results, unless otherwise
specified.
Table 14. Embedded internal reference voltage calibration values
Calibration value name Description Memory address
VREFINT_CAL
Raw data acquired at
temperature of 30 °C ±5 °C
V
DDA
= 3 V ±10 mV
0x1FF8 00F8 - 0x1FF8 00F9
Table 15. Embedded internal reference voltage
Symbol Parameter Conditions Min Typ Max Unit
V
REFINT out
(1)
Internal reference voltage – 40 °C < T
J
< +110 °C 1.202 1.224 1.242 V
I
REFINT
Internal reference current
consumption
- - 1.4 2.3 µA
T
VREFINT
Internal reference startup time - - 2 3 ms
V
VREF_MEAS
V
DDA
and V
REF+
voltage during
V
REFINT
factory measure
- 2.99 3 3.01 V
A
VREF_MEAS
Accuracy of factory-measured V
REF
value
(2)
Including uncertainties
due to ADC and
V
DDA
/V
REF+
values
- - ±5 mV
T
Coeff
(3)
Temperature coefficient
–40 °C < T
J
< +110 °C - 20 50
ppm/°
C
0 °C < T
J
< +50 °C - - 20
A
Coeff
(3)
Long-term stability 1000 hours, T= 25 °C - - 1000 ppm
V
DDCoeff
(3)
Voltage coefficient 3.0 V < V
DDA
< 3.6 V - - 2000 ppm/V
T
S_vrefint
(3)
ADC sampling time when reading
the internal reference voltage
- 4 - - µs
T
ADC_BUF
(3)
Startup time of reference voltage
buffer for ADC
- - - 10 µs
I
BUF_ADC
(3)
Consumption of reference voltage
buffer for ADC
- - 13.5 25 µA
I
VREF_OUT
(3)
VREF_OUT output current
(4)
- - - 1 µA
C
VREF_OUT
(3)
VREF_OUT output load - - - 50 pF
I
LPBUF
(3)
Consumption of reference voltage
buffer for VREF_OUT and COMP
- - 730 1200 nA
V
REFINT_DIV1
(3)
1/4 reference voltage - 24 25 26
%
V
REFIN
T
V
REFINT_DIV2
(3)
1/2 reference voltage - 49 50 51
V
REFINT_DIV3
(3)
3/4 reference voltage - 74 75 76
1. Guaranteed by test in production.
2. The internal V
REF
value is individually measured in production and stored in dedicated EEPROM bytes.
3. Guaranteed by design, not tested in production.
4. To guarantee less than 1% VREF_OUT deviation.
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