DocID024995 Rev 4
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STM32L100RC
96
6.3.13 I/O
port
characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in
are derived from tests
performed under the conditions summarized in
. All I/Os are CMOS and TTL
compliant.
Table 41. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
IL
Input low level voltage
TC and FT I/O
-
-
0.3 V
DD
(1)(2)
V
BOOT0
-
-
0.14 V
DD
(2)
V
IH
Input high level voltage
TC I/O
0.45 V
DD
+0.38
(2)
-
-
FT I/O
0.39 V
DD
+0.59
(2)
-
-
BOOT0
0.15 V
DD
+0.56
(2)
-
-
V
hys
I/O Schmitt trigger voltage
hysteresis
(2)
TC and FT I/O
-
10% V
DD
(3)
-
BOOT0
-
0.01
-
I
lkg
Input leakage current
(4)
V
SS
≤
V
IN
≤
V
DD
I/Os with LCD
-
-
±50
nA
V
SS
≤
V
IN
≤
V
DD
I/Os with analog
switches
-
-
±50
V
SS
≤
V
IN
≤
V
DD
I/Os with analog
switches and LCD
-
-
±50
V
SS
≤
V
IN
≤
V
DD
I/Os with USB
-
-
±250
V
SS
≤
V
IN
≤
V
DD
TC and FT I/Os
-
-
±50
FT I/O
V
DD
≤
V
IN
≤
5V
-
-
±10
µA
R
PU
Weak pull-up equivalent
resistor
(5)(1)
V
IN
=
V
SS
30
45
60
k
Ω
R
PD
Weak pull-down equivalent
resistor
(5)
V
IN
=
V
DD
30
45
60
k
Ω
C
IO
I/O pin capacitance
-
-
5
-
pF
1.
Guaranteed by test in production
2.
Guaranteed by design, not tested in production.
3.
With a minimum of 200 mV.
4.
The max. value may be exceeded if negative current is injected on adjacent pins.
5.
Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
MOS/NMOS contribution to the series resistance is minimum (~10% order).
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021-31660491
