STMicroelectronics STM32F042C6, Manual

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Electrical characteristics STM32F042x4 STM32F042x6
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6.3.14 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in
Table 50
are derived from tests
performed under the conditions summarized in
Table 21: General operating conditions
. All
I/Os are designed as CMOS- and TTL-compliant.
Table 49. I/O current injection susceptibility
Symbol Description
Functional
susceptibility
Unit
Negative
injection Positive
injection
I
INJ
Injected current on PA12 pin -0 +5
mA
Injected current on PA9, PB3, PB13, PF11 pins with induced
leakage current on adjacent pins less than 50 µA
-5 NA
Injected current on PB0, PB1 and all other FT and FTf pins -5 NA
Injected current on all other TC, TTa and RST pins -5 +5
Table 50. I/O static characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
IL
Low level input
voltage
TC and TTa I/O - - 0.3 V
DDIOx
+0.07
(1)
V FT and FTf I/O - - 0.475 V
DDIOx
–0.2
(1)
All I/Os - - 0.3 V
DDIOx
V
IH
High level input
voltage
TC and TTa I/O 0.445 V
DDIOx
+0.398
(1)
- -
V FT and FTf I/O 0.5 V
DDIOx
+0.2
(1)
- -
All I/Os 0.7 V
DDIOx
- -
V
hys
Schmitt trigger
hysteresis
TC and TTa I/O - 200
(1)
-
mV
FT and FTf I/O - 100
(1)
-
I
lkg
Input leakage
current
(2)
TC, FT and FTf I/O
TTa in digital mode
V
SS
≤ V
IN
≤ V
DDIOx
- - ± 0.1
µA
TTa in digital mode
V
DDIOx
≤ V
IN
≤ V
DDA
- - 1
TTa in analog mode
V
SS
≤ V
IN
≤ V
DDA
- - ± 0.2
FT and FTf I/O
V
DDIOx
≤ V
IN
≤ 5 V
- - 10
R
PU
Weak pull-up
equivalent resistor
(3)
V
IN
=
V
SS
25 40 55 k Ω