STMicroelectronics STM32F042C4, Manual

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Electrical characteristics STM32F042xx
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Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of the -5
μ A/+0 μ A range) or other functional failure (for example reset occurrence or
oscillator frequency deviation).
The characterization results are given in Table 49 .
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.
6.3.14 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 50 are derived from tests
performed under the conditions summarized in Table 21: General operating conditions . All
I/Os are designed as CMOS- and TTL-compliant.
Table 49. I/O current injection susceptibility
Symbol Description
Functional
susceptibility
Unit
Negative
injection Positive
injection
I
INJ
Injected current on PA12 pin -0 +5
mA
Injected current on PA9, PB3, PB13, PF11 pins with
induced leakage current on adjacent pins less than 50
μ A
-5 NA
Injected current on PB0, PB1 and all other FT and FTf pins -5 NA
Injected current on all other TC, TTa and RST pins -5 +5
Table 50. I/O static characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
IL
Low level input
voltage
TC and TTa I/O - - 0.3 V
DDIOx
+0.07
(1)
V FT and FTf I/O - - 0.475 V
DDIOx
–0.2
(1)
All I/Os - - 0.3 V
DDIOx
V
IH
High level input
voltage
TC and TTa I/O 0.445 V
DDIOx
+0.398
(1)
- -
V FT and FTf I/O 0.5 V
DDIOx
+0.2
(1)
- -
All I/Os 0.7 V
DDIOx
- -
V
hys
Schmitt trigger
hysteresis
TC and TTa I/O - 200
(1)
-
mV
FT and FTf I/O - 100
(1)
-