DocID025832 Rev 2
STM32F042xx
Electrical characteristics
94
I
lkg
Input leakage
current
(2)
TC, FT and FTf I/O
TTa in digital mode
V
SS
V
IN
V
DDIOx
-
-
0.1
μ
A
TTa in digital mode
V
DDIOx
V
IN
V
DDA
-
-
1
TTa in analog mode
V
SS
V
IN
V
DDA
-
-
0.2
FT and FTf I/O
(3)
V
DDIOx
V
IN
5 V
-
-
10
R
PU
Weak pull-up
equivalent resistor
(4)
V
IN
V
SS
25
40
55
k
R
PD
Weak pull-down
equivalent
resistor
V
IN
V
DDIOx
25
40
55
k
C
IO
I/O pin capacitance
-
5
-
pF
1. Data based on design simulation only. Not tested in production.
2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to
I/O current injection susceptibility
.
3. To sustain a voltage higher than V
DDIOx
+ 0.3
V, the internal pull-up/pull-down resistors must be disabled.
4. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
Table 50. I/O static characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit