UM1996
Circuit
description
DocID028716 Rev 2
15/29
4
Circuit description
4.1
Power section
4.1.1
L6398 gate driver and STL220N6F7 STripFET™
F7 Power MOSFET
The main section is based on:
1.
L6398
single-chip half bridge gate driver for the N-channel power MOSFET - a high-
voltage device manufactured with the BCD “OFF
-
LINE” te
chnology. The high side
(floating) section is designed to handle a voltage rail of up to 600 V and the logic
inputs are CMOS/TTL compatible down to 3.3 V for easy microcontroller/DSP
interfacing.
2.
STL220N6F7
260 A
–
60 V N-channel Power MOSFET
–
based on th
e STripFET™
F7 technology with an enhanced trench gate structure that results in very low on-state
resistance, while also reducing internal capacitance and gate charge for faster and
more efficient switching. It features:
Among the lowest RDS(on) on the ma
rket: 0.0014 Ω
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Together, these devices form the high current power platform for the BLDC motor. The
main supply voltage is provided through an external connector (J1) and you can set jumper
(J9) to choose whether the digital section (STM32 Nucleo board) is supplied via USB (USB
type A to Mini-B USB cable) or through the expansion board. By default, the STM32 nucleo
expansion board provides the supply voltage to the STM32 Nucleo board through its
internal voltage regulator, but you can choose to supply it directly from the J1 power
connector if higher conversion efficiency is required and if the input voltage is lower than 12
V DC (see
