S p e cifica t ion fo r T S - 7 I2 P
Semiconductor:
2 Integated Circuits,
3 FET, 15 Transistors,
22 Silicon diodes,
3 Zener diodes.
Transmitter System:
Crystal cpntrolled.
Gollector modulation AM.
Frequency:
12 Channel on 27 MHz Band.
Input Power:
0.5 Watts. (3 Watts).
Band Width:
8 KHz (max).
Antenna Impédance:
50— 52 ohm.
Receiver System:
Single conversion superheterodyne.
Crystal controlled.
S ensitivity :
1 ß4 or better for 500 mW output.
10 dB signal to noise ratio.
Intermediate Frequecy:
455 KHz.
S electivity :
30 dB down at 10 KHz.
Squelch S ensitivity:
1 //V
Audio Output Power:
2W watts in 10% distortion.
Power Source:
220V AC.
Fuse:
ЗА.
Microphone :
Dynamic type Impédance 500 ohm.
with Press-to -ta lk switch.
Speaker:
Dynamic type voice coil impédance 8 ohm.
Size:
156X 58X205 m/m.
Weight :
2.3 kg.
Accessories :
Mounting bracket, Mounting hard wäre,
AC power cord, Microphone hanger.
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