Samsung
Confidential
ELECTRONICS
A
C
D
D
C
EXCEPT AS AUTHORIZED BY SAMSUNG.
B
4
3
4
(1.8V) (7A)
(354 ~ 366KHz)
1
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
2
SAMSUNG ELECTRONICS CO’S PROPERTY.
1
3
DDR2 Power
PROPRIETARY INFORMATION THAT IS
THIS DOCUMENT CONTAINS CONFIDENTIAL
SAMSUNG
B
2
SAMSUNG PROPRIETARY
A
R222
1%
12.1
1000nF
6.3V
C650
1000nF
C651
P5.0V
EC14
330uF
2.5V
AL
6.3V
1nF
50V
nostuff
C381
12.1
R197
1%
G_DDR
P5.0V_AUX
INSTPAR
SHORT501
11
13
VTTIN_1
12
VTTIN_2
VTTS
10
VTT_1
15
VTT_2
14
6.3V
C307
10000nF
DL
1
EN_PSV
FB
6
ILIM
21
22
LX
PGD
7
PGND_1
18
PGND_2
17
16
PGND_3
8
REF
25
THERM
TON
2
5
VCCA
VDDP
20
VDDQS
3
4
VSSA
VTTEN
VDC
U7
SC486IMLTRT
BST
24
9
COMP
23
DH
19
D1
5 6
D2 D3
7 8
D4
G
4
S1
1 2
S2 S3
3
FDS6680A
Q519
G_DDR
G_DDR
6.3V
1000nF
C649
100K
R224
1%
P1.8V_AUX
P1.8V_AUX
P5.0V_AUX
1nF
0
R633
1%
50V
C393
25V
P0.9V
3.01K
R631
C680
G_DDR
C392
10000nF
G_DDR
2.2nF
50V
R629
3.3
4
G
S1
1
S2
2 3
S3
VDC
G_DDR
Q28
FDS6680A
5
D1 D2
6 7
D3 D4
8
P5.0V_AUX
25V
C646
100nF
R632
1%
12.1
1000nF
C647
6.3V
BAT54
D508
1
3
1%
R225
100K
nostuff
19-C3
18-C3
15-D1
C382
nostuff
50V
1nF
60-C3
10000nF
C378
25V
25V
100nF
C379
715K
1%
R220
10000nF
C380
6.3V
G_DDR
1%
R663
1K
P1.8V_AUX
100K
R226
C400
50V
1%
1nF
nostuff
12.1
6.3V
1000nF
C648
G_DDR
R634
1%
2.2uH
PCMC063T-2R2MN
L5
R630
10K 1%
R223
30.1K
1%
MEM1_VREF
KBC3_SUSPWR
Summary of Contents for NT-R70xxxx Series
Page 3: ......
Page 4: ......
Page 5: ......
Page 6: ......
Page 7: ...Решение ...
Page 8: ...R70 R40 ...
Page 9: ...Относится к моделям произведенным в июле августе 2007 года ...
Page 10: ......
Page 11: ...В модели R60 может использоваться память нового производителя A DATA part number 1105 001797 ...
Page 141: ...4 20 4 Troubleshooting This document cannot be used without the authorization of Samsung ...
Page 142: ...4 21 4 Troubleshooting This document cannot be used without the authorization of Samsung ...