Samsung
Confidential
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1
1
DDR2 Power
(7A)
SAMSUNG ELECTRONICS CO’S PROPERTY.
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
15mohm
15mohm
TITLE
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
DEV. STEP
REV
LAST EDIT
1.0
SR
3/15/2007
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LEE, KEVIN
ZHENG, ROKY
ZHANG, ELLEN
APPROVAL
CHECK
DRAW
SAMSUNG
ELECTRONICS
DATE
A
A
B
MODULE CODE
PART NO.
PAGE
C
C
OF
D
D
4
4
B
3
PROPRIETARY INFORMATION THAT IS
3
2
2
DDR2 POWER
SHANGHAI
54
46
BA41-00774A/00732A
March 15, 2007 10:33:33 AM
36-B2
43-A3
43-A4
43-B2
C174
4.7nF
SI4816DY
Q32
NO_STUFF
8
D1
5
6
7
1
G1
G2
4
2 3
49-C4
G_DDR
INSTPAR
R171
2.5V
AL
EC511
330uF
R223
0
NO_STUFF
10000nF
C150
R212
51.1K
1000nF
C151
10000nF
C816
NO_STUFF
NO_STUFF
R210
0
R205
0
NO_STUFF
R206
0
C147
10nF
P5.0V_AUX
C148
10000nF
25
SKIP*
8
SS
7
STBY
THERM
29
1
TON
22
VDD
17
VIN
12
VTT
13
VTTI
10
VTTR
9
VTTS
18
DH
21
DL
15
FB
24
GND
4
ILIM
19
LX
16
OUT
2
OVP_UVP
23
PGND1
11
PGND2
5
POK1
6
POK2
3
REF
14
REFIN
27
SHDNA*
28
SHDNB*
MAX
U14
26
AVDD
20
BST
MEM1_VREF
P0.9V
G2
2 3
20
R170
1%
Q34
SI4816DY
D1 8
5
6
7
G1
1
4
0
R224
3.9nF
C152
R213
10K
NO_STUFF
R204
10
R208
0
NO_STUFF
1%
AL
2.5V
330uF
NO_STUFF
P1.8V_AUX
EC512
R214
51.1K
200K
R169
G_DDR
10000nF
C817
0
R209
NO_STUFF
47-D2
49-B4
L509
2.2uH
0.47nF
C176
C130
0.22nF
NO_STUFF
NO_STUFF
C822
0.1nF
R207
0
G_DDR
VDC
G_DDR
47-A3
47-A2 44-B3 36-C4
47-B2
47-B3
47-D2
3
C172
100nF
BAT54
D15
C185
4700nF
G_DDR
220nF
C173
C175
1000nF
NO_STUFF
0
R203
300K
R168
G_DDR
C149
10000nF
C610
100nF
R211
200K
220nF
C177
C146
100nF
TP2526
3.3
R202
KBC3_SUSPWRON
KBC3_PWRON
PWRON#
P5.0V_ALWS
P1.8V_AUX