SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
SAMSUNG
P1.5V & VCCP (1.05V)
B
3
2
A
A
ELECTRONICS
B
C
C
D
D
4
4
3
2
1
1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
1nF
C280
VDC
INSTPAR
R863
1%
D_AGND
43.2K
R207
100nF
C820
25V
R195
0
2
50V
1nF
C816
nostuff
D525
BAT54A
3
1
R198
30.1K
1.5K
R196
1%
1%
C279
100nF
25V
D_AGND
15mohm
AL
2.5V
330uF
EC16
VDC
D_AGND
4.7nF
C823
25V
P3.3V
25V
C819
4.7nF
P3.3V
nostuff
50V
1nF
C278
25V
C920
100nF
#2
D_AGND
C818
1nF
50V
IRF7904
Q522
8
D1
5
6
7
1
G1
G2
4
2 3
50-C4
49-A2
41-C4
35-B2
52-B1
52-B2
53-A2
G2
2
3
IRF7904
Q523
D1
8
5
6
7
G1
1
4
R206
1%
1%
R197
5.11K
D_AGND
30.1K
25V
C824
100nF
41-B3
51-C4
P5V_AUX
D_AGND
1%
R862
1.5K
R205
3.3
D_AGND
1%
AL
2.5V
330uF
EC19
10K
R864
15mohm
C817
D_AGND
EC21
68uF
25V
AL
VOUT1
20
VOUT2
10
VSEN1
19
VSEN2
25V
100nF
LGATE1
27
LGATE2
11
OCSET1
18
OCSET2
15
PG1
16
PG2_REF
3
PGND1
26
PGND2
4
PHASE1
25
PHASE2
12
SOFT1
17
SOFT2
5
UGATE1
24
UGATE2
28
VCC
14
VIN
9
ISL6227CAZ-T
U14
6
BOOT1
23
BOOT2
13
DDR
8
EN1
21
EN2
1
GND
7
ISEN1
22
ISEN2
2
0
R868
100K
R867
1%
6.3V
C252
4700nF
10V
100nF
C822
25V
100nF
C282
R861
100K
1%
R208
10
10nF
C253
919AS-3R7M
D_AGND
51-C4
P5V_AUX
L9
3.7uH
50-C4 52-B1
919AS-3R7M
3.7uH
L8
EC20
68uF
25V
AL
1.5K
R204
1%
D_AGND
D_AGND
VDC
4700nF
C815
6.3V
25V
C281
4.7nF
P1.5V
VCCP
10V
C204
100nF
KBC3_VRON
KBC3_PWRON
VCCP3_PWRGD
P1.5V_PWRGD
3.3
R860
