RT8239A/B/C
9
DS8239A/B/C-06 October 2012
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©
Copyright 2012 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.
Parameter Symbol Test
Conditions
Min
Typ
Max
Unit
PGOOD Leakage Current
I
LK_PGOOD
High State, Forced to 5.5V
--
--
1
μ
A
PGOOD Output Low Voltage V
SINK_PGOOD
I
SINK
= 4mA
--
--
0.4
V
SECFB Power Good
Threshold
V
SFB_PGOOD
SECFB with Respect to 2V
(RT8239B/C)
40 50 60 %
Fault Detection
Over Voltage Protection Trip
Threshold
V
OVP
OVP Detect, FBx Rising Edge
108
112
116
%
Over Voltage Protection
Propagation Delay
t
DLY_OVP
Rising
Edge
-- 5 --
μ
s
V
UVP
UVP Detect, FBx Falling Edge.
53
58
63
%
Under Voltage Protection Trip
Threshold
V
SFB_UVP
UVP Detect, SECFB Falling Edge.
0.8
--
1.2
V
Under Voltage Protection
Shutdown Blanking Time
t
SSHx
From ENTRIPx or ENM Enable
--
5
--
ms
Thermal Shutdown
Thermal Shutdown
T
SD
--
150
--
°C
Thermal Shutdown Hysteresis
Δ
T
SD
--
10
--
°C
Logic Input
ENTRIPx Input Voltage
V
ENTRIPx
Clear Fault Level/SMPSx Off Level
4.5
--
--
V
Rising Edge Threshold
1.2
1.6
2
Falling Edge Threshold
0.9
0.95
1
ENLDO Input Voltage
V
ENLDO
When ENLDO is Floating (Default
Enable)
2.1 -- --
V
Clear Fault Level/SMPSs Off Level
--
--
0.8
SMPSs On, DEM Operation
2.3
--
3.6
ENM Input Voltage
(RT8239A)
V
ENM
SMPSs On, Ultrasonic Mode
Operation
4.5 -- --
V
I
FBx
V
FBx
= 0V or 5V
−
1
-- 1
I
P13
ENM/SECFB = 0V or 5V
−
1
-- 1
Input Leakage Current
I
ENLDO
ENLDO = 0V or 5V
−
1
-- 3
μ
A
Internal BOOT Switch
Internal Boost Charging
Switch On-Resistance
R
BOOTx
LDO5 to BOOTx, 10mA
--
--
90
Ω
Power MOSFET Drivers
R
UGATEsr
Source,
V
BOOTx
−
V
UGATEx
= 0.1V
-- 5 8
UGATEx On-Resistance
R
UGATEsk
Sink,
V
UGATEx
−
V
PHASEx
= 0.1V
-- 2 4
Ω
R
LGATEsr
Source,
V
LDO5
−
V
LGATEx
= 0.1V
-- 5 8
LGATEx On-Resistance
R
LGATEsk
Sink,
V
LGATEx
= 0.1V
-- 1.5 3
Ω
t
LGATERx
UGATEx Off to LGATEx On
--
30
--
Dead Time
t
UGATERx
LGATEx Off to UGATEx On
--
40
--
ns
