RT8238A
6
RT8238A-07 January 2014
www.richtek.com
©
Copyright 2014 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.
Parameter Symbol Test
Conditions Min
Typ
Max
Unit
LGATE Rising (V
PHASE
= 1.5V)
-- 30 --
Dead Time
UGATE Rising
--
30
--
ns
Internal Boost Charging
Switch on Resistance
V
CC
to BOOT, 10mA
-- --
80
Ω
EN Threshold
Logic-High V
IH
1.2 --
--
Enable
Threshold
Voltage
Logic-Low V
IL
-- --
0.4
V
Mode Threshold
DEM Threshold
V
CC
−
0.5
-- -- V
ASM Threshold
1.8
--
2.9
V
FCCM Threshold
--
--
0.4
V
PGOOD
(upper side threshold decided by OV threshold)
Trip Threshold (falling)
Measured at FB, with respect to
reference
−
13
−
10
−
7
%
Trip Threshold Hysteresis
--
3
--
%
Fault Propagation Delay
Falling edge, FB forced below
PGOOD trip threshold
-- 2.5 --
μ
s
Output Low Voltage
I
SINK
= 1mA
-- --
0.4
V
Leakage Current
High state, forced to 5V
--
--
1
μ
A
Note 1.
Stresses listed as the above
“
Absolute Maximum Ratings
”
may cause permanent damage to the device. These are
stress ratings, Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2.
θ
JA
is measured in natural convection at T
A
= 25
°
C on a low-effective thermal conductivity test board of JEDEC 51-3
thermal measurement standard.
Note 3.
Devices are ESD sensitive. Handling precaution is recommended.
Note 4.
The device is not guaranteed to function outside its operating conditions.
