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HSG2004 

Rev.4.00  Jun 21, 2006  page 4 of 12 

 

2.4 GHz Characteristics 

Input Power  Pin (dBm)

Output Power P

out

 (dBm)

Power Gain  PG (dB)

10

-5

-10

15

20

0

25

10

0

100

0

150

200

50

300

P

in 

- P

out 

Characteristics

I

op

 (mA)

Evaluation Board Circuit

P

in

 - P

out

 Characteristics

-20

-10

-40

0

10

-20

20

1.5

3.0

4.0

2.5

1.0

Frequency  f (GHz)

S parameter (dB)

S parameter vs. Frequency

-20

0

20

-40

40

-40

0

40

-20

-60

Input Power P

in

 (dBm)

3rd. Order Intermodulation Distortion (IMD3)

-50

20

2.0

3.5

-30

-10

-40

0

10

-20

20

1.5

3.0

4.0

2.5

1.0

Frequency  f (GHz)

S parameter (dB)

S parameter vs. Frequency

2.0

3.5

-30

S21

S22

S12

S11

V

CE

 = 3.6 V

I

C

 = 40 mA

S21

S22

S12

S11

V

CE

 = 3.6 V

I

C

 = 30 mA

-30

-10

10

30

V

CE

 = 3.6 V

I

idle

 = 30 mA

f = 2.4 GHz

Fundamental

(1tone)

IMD3

(2tone: 

f = 1MHz)

5

250

P

out

 / IMD3 (dBm)

OUT

IN

C : 1 pF

R : 27 

VCC 

VBB:Bias Control

C : 1 to 2 pF 

L : 5.6 nH

L : 1.5 nH

C : 2 pF

C : 0.9 pF 

L : 1.8 nH

L : 10 nH

10 pF

1000 pF *1 

µ

1000 pF

*1 

µ

F 10 

pF

I

op

V

CC

 = 3.6 V

I

idle

 = 30 mA

f = 2.4 GHz

PG

P

out

 

Summary of Contents for HSG2004

Page 1: ...e Outline Renesas Package code PWQN0008ZA A Package name HWQFN 8 TNP 8TV 1 Collector 2 Collector 3 Collector 4 Emitter 5 Emitter 6 Base 7 Emitter 8 Emitter 9 Emitter 1 3 7 6 5 2 4 8 9 1 3 7 6 5 2 4 8...

Page 2: ...4 15 5 dB VCE 3 V IC 30 mA f 5 8 GHz Maximum Available Gain MAG 21 dB VCE 3 V IC 30 mA f 2 4 GHz Maximum Available Gain MAG 12 dB VCE 3 V IC 30 mA f 5 8 GHz Power Gain PG 11 5 dB VCE 3 6 V Iidle 30 mA...

Page 3: ...Characteristics 200 0 1 10 100 Collector Current IC mA DC Current Transfer Ratio h FE DC Current Transfer Ratio vs Collector Current 300 400 100 Reverse Transfer Capacitanse C re pF Reverse Transfer C...

Page 4: ...40 40 40 0 40 20 60 Input Power Pin dBm 3rd Order Intermodulation Distortion IMD3 50 20 2 0 3 5 30 10 40 0 10 20 20 1 5 3 0 4 0 2 5 1 0 Frequency f GHz S parameter dB S parameter vs Frequency 2 0 3 5...

Page 5: ...10 20 20 5 7 8 6 4 Frequency f GHz S parameter dB S parameter vs Frequency 20 0 20 40 40 40 0 40 20 60 Input Power Pin dBm P out IMD3 dBm 3rd Order Intermodulation Distortion IMD3 60 20 100 0 150 200...

Page 6: ...3 4 5 1 5 10 0 30 60 90 120 150 180 150 90 60 30 120 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Scale 14 div Scale 0 04 div 0 Co...

Page 7: ...3 4 5 1 5 10 0 30 60 90 120 150 180 150 90 60 30 120 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Scale 14 div Scale 0 04 div 0 Co...

Page 8: ...3 4 5 1 5 10 0 30 60 90 120 150 180 150 90 60 30 120 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Scale 14 div Scale 0 04 div 0 Co...

Page 9: ...000 0 668 169 3 8 08 64 1 0 0294 34 3 0 432 144 1 2100 0 669 167 1 7 65 62 4 0 0297 35 2 0 435 145 2 2200 0 673 164 9 7 27 60 7 0 0304 35 9 0 438 146 2 2300 0 678 163 1 6 92 59 2 0 0310 36 5 0 441 147...

Page 10: ...00 0 667 169 5 8 14 64 14 0 0294 35 0 0 431 143 6 2100 0 667 167 3 7 71 62 39 0 0297 35 5 0 434 144 8 2200 0 671 165 1 7 33 60 67 0 0305 35 8 0 437 145 7 2300 0 676 163 3 6 97 59 20 0 0311 36 7 0 440...

Page 11: ...0 0 665 169 8 8 18 64 18 0 0292 34 2 0 431 143 2 2100 0 666 167 5 7 75 62 44 0 0298 34 7 0 433 144 3 2200 0 670 165 3 7 37 60 71 0 0306 35 9 0 436 145 4 2300 0 675 163 5 7 01 59 24 0 0310 36 8 0 439 1...

Page 12: ...5 0 60 7 3 2 ZD Z E C0 15 1 e A S B S y1 P HWQFN8 2x2 0 65 PWQN0008ZA A TNP 8TV 0 009g MASS Typ RENESAS Code JEITA Package Code Previous Code Package Name HWQFN 8 Ordering Information Part Name Quanti...

Page 13: ...loss resulting from the information contained herein 5 Renesas Technology Corp semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which...

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