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Keep safety first in your circuit designs!

1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble 

may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.

   Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary 
   circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's 

application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.

2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, 

diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of 

publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons.  It is 
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product 
information before purchasing a product listed herein.

   The information described here may contain technical inaccuracies or typographical errors.
   Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
   Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor 

home page (http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to 

evaluate all information as a total system before making a final decision on the applicability of the information and products.  Renesas Technology Corp. assumes 
no responsibility for any damage, liability or other loss resulting from the information contained herein.

5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life 

is potentially at stake.  Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a 
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater 
use.

6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and 

cannot be  imported into a country other than the approved destination.

   Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.

8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.

Sales Strategic Planning Div.    Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

http://www.renesas.com

Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

Renesas Technology America, Inc.
450 Holger  Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408)  382-7500, Fax: <1> (408)  382-7501

 

Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628)  585-100, Fax: <44> (1628)  585-900

Renesas Technology (Shanghai) Co., 

Ltd.

Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21)  5877-1818, Fax: <86> (21)  6887-7898

 

Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong   
Tel: <852> 2265-6688, Fax: <852> 2730-6071

Renesas Technology Taiwan Co., 

Ltd.

10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2)  2715-2888, Fax: <886> (2)  2713-2999

 

Renesas Technology Singapore Pte. Ltd.

1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 
Tel: <65> 6213-0200, Fax: <65> 6278-8001

Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea

Tel: <82> (2)  796-3115, Fax: <82> (2)  796-2145

 

Renesas Technology Malaysia Sdn. Bhd

Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510

RENESAS SALES OFFICES

 

© 2006. Renesas Technology Corp., All rights reserved.  Printed in Japan. 

Colophon .6.0

 

Summary of Contents for HSG2004

Page 1: ...e Outline Renesas Package code PWQN0008ZA A Package name HWQFN 8 TNP 8TV 1 Collector 2 Collector 3 Collector 4 Emitter 5 Emitter 6 Base 7 Emitter 8 Emitter 9 Emitter 1 3 7 6 5 2 4 8 9 1 3 7 6 5 2 4 8...

Page 2: ...4 15 5 dB VCE 3 V IC 30 mA f 5 8 GHz Maximum Available Gain MAG 21 dB VCE 3 V IC 30 mA f 2 4 GHz Maximum Available Gain MAG 12 dB VCE 3 V IC 30 mA f 5 8 GHz Power Gain PG 11 5 dB VCE 3 6 V Iidle 30 mA...

Page 3: ...Characteristics 200 0 1 10 100 Collector Current IC mA DC Current Transfer Ratio h FE DC Current Transfer Ratio vs Collector Current 300 400 100 Reverse Transfer Capacitanse C re pF Reverse Transfer C...

Page 4: ...40 40 40 0 40 20 60 Input Power Pin dBm 3rd Order Intermodulation Distortion IMD3 50 20 2 0 3 5 30 10 40 0 10 20 20 1 5 3 0 4 0 2 5 1 0 Frequency f GHz S parameter dB S parameter vs Frequency 2 0 3 5...

Page 5: ...10 20 20 5 7 8 6 4 Frequency f GHz S parameter dB S parameter vs Frequency 20 0 20 40 40 40 0 40 20 60 Input Power Pin dBm P out IMD3 dBm 3rd Order Intermodulation Distortion IMD3 60 20 100 0 150 200...

Page 6: ...3 4 5 1 5 10 0 30 60 90 120 150 180 150 90 60 30 120 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Scale 14 div Scale 0 04 div 0 Co...

Page 7: ...3 4 5 1 5 10 0 30 60 90 120 150 180 150 90 60 30 120 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Scale 14 div Scale 0 04 div 0 Co...

Page 8: ...3 4 5 1 5 10 0 30 60 90 120 150 180 150 90 60 30 120 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Scale 14 div Scale 0 04 div 0 Co...

Page 9: ...000 0 668 169 3 8 08 64 1 0 0294 34 3 0 432 144 1 2100 0 669 167 1 7 65 62 4 0 0297 35 2 0 435 145 2 2200 0 673 164 9 7 27 60 7 0 0304 35 9 0 438 146 2 2300 0 678 163 1 6 92 59 2 0 0310 36 5 0 441 147...

Page 10: ...00 0 667 169 5 8 14 64 14 0 0294 35 0 0 431 143 6 2100 0 667 167 3 7 71 62 39 0 0297 35 5 0 434 144 8 2200 0 671 165 1 7 33 60 67 0 0305 35 8 0 437 145 7 2300 0 676 163 3 6 97 59 20 0 0311 36 7 0 440...

Page 11: ...0 0 665 169 8 8 18 64 18 0 0292 34 2 0 431 143 2 2100 0 666 167 5 7 75 62 44 0 0298 34 7 0 433 144 3 2200 0 670 165 3 7 37 60 71 0 0306 35 9 0 436 145 4 2300 0 675 163 5 7 01 59 24 0 0310 36 8 0 439 1...

Page 12: ...5 0 60 7 3 2 ZD Z E C0 15 1 e A S B S y1 P HWQFN8 2x2 0 65 PWQN0008ZA A TNP 8TV 0 009g MASS Typ RENESAS Code JEITA Package Code Previous Code Package Name HWQFN 8 Ordering Information Part Name Quanti...

Page 13: ...loss resulting from the information contained herein 5 Renesas Technology Corp semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which...

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