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Keep safety first in your circuit designs!

1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble 

may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.

   Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary 
   circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's 

application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.

2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, 

diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of 

publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons.  It is 
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product 
information before purchasing a product listed herein.

   The information described here may contain technical inaccuracies or typographical errors.
   Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
   Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor 

home page (http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to 

evaluate all information as a total system before making a final decision on the applicability of the information and products.  Renesas Technology Corp. assumes 
no responsibility for any damage, liability or other loss resulting from the information contained herein.

5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life 

is potentially at stake.  Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a 
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater 
use.

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   Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.

8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.

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© 2005. Renesas Technology Corp., All rights reserved.  Printed in Japan. 

Colophon .3.0

 

Summary of Contents for 2SK3069

Page 1: ...itching REJ03G1062 1100 Previous ADE 208 694I Rev 11 00 Sep 07 2005 Features Low on resistance RDS on 6 m typ Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Pack...

Page 2: ...urce leak current IGSS 0 1 A VGS 20 V VDS 0 Zero gate voltage drain current IDSS 10 A VDS 60 V VGS 0 Gate to source cutoff voltage VGS off 1 0 2 5 V ID 1 mA VDS 10 V Note 4 6 0 7 5 m ID 40 A VGS 10 V...

Page 3: ...o Source Voltage Drain to Source Saturation Voltage V DS on V Drain Current ID A Static Drain to Source on State Resistance vs Drain Current Static Drain to Source on State Resistance R DS on m 200 15...

Page 4: ...tics Gate Charge Qg nc Drain to Source Voltage V DS V Gate to Source Voltage V GS V Switching Characteristics Switching Time t ns Drain Current ID A 20 16 12 8 4 50 0 50 100 150 200 0 VGS 10 V 4 V Pul...

Page 5: ...ain Current I DR A Reverse Drain Current vs Source to Drain Voltage D U T Rg IAP Monitor VDS Monitor VDD 50 Vin 15 V 0 ID VDS IAP V BR DSS L VDD EAR L IAP 2 2 1 VDSS VDSS VDD Avalanche Test Circuit Av...

Page 6: ...2SK3069 Rev 11 00 Sep 07 2005 page 6 of 7 Vin Monitor D U T Vin 10 V RL VDD 30 V tr td on Vin 90 90 10 10 Vout td off Vout Monitor 50 90 10 tf Switching Time Test Circuit Switching Time Waveforms...

Page 7: ...5 Max 9 5 8 0 1 27 6 4 0 2 0 1 3 6 0 1 0 08 Package Name PRSS0004AC A TO 220AB TO 220ABV MASS Typ 1 8g SC 46 RENESAS Code JEITA Package Code Unit mm Ordering Information Part Name Quantity Shipping C...

Page 8: ...or other loss resulting from the information contained herein 5 Renesas Technology Corp semiconductors are not designed or manufactured for use in a device or system that is used under circumstances...

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