2SK3069
Rev.11.00 Sep 07, 2005 page 4 of 7
Case Temperature T
C
(
°
C)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(m
Ω
)
Forward Transfer Admittance
vs. Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance
y
fs
(S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A)
Reverse Recovery Time t
rr
(ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D
(A)
20
16
12
8
4
–50
0
50
100
150
200
0
V
GS
= 10 V
4 V
Pulse Test
10, 20, 50 A
I
D
= 50 A
10 A
20 A
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25
°
C
75
°
C
25
°
C
V
DS
= 10 V
Pulse Test
0.1
0.3
1
3
10
30
100
0
10
20
30
40
50
1000
10000
3000
100
80
60
40
20
0
20
16
12
8
4
80
160
240
320
400
0
1000
100
200
20
10
0.1 0.2
2
10
100
1000
500
100
200
20
50
10
di / dt = 50 A /
µ
s
V
GS
= 0, Ta = 25
°
C
300
20
1
100
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= 75 A
V
GS
V
DS
V
DD
= 50 V
25 V
10 V
V
DD
= 50 V
25 V
10 V
0.5
5
500
50
50
V
GS
= 10 V,
V
DD
= 30 V
PW = 5
µ
s, duty < 1 %
tr
td(on)
td(off)
tf
30000
