Renesas 2SK3069 Datasheet Download Page 1

Page: 1 / 8

Rev.11.00 Sep 07, 2005 page 1 of 7

2SK3069

Silicon N Channel MOS FET
High Speed Power Switching

REJ03G1062-1100

(Previous: ADE-208-694I)

Rev.11.00

Sep 07, 2005

Features

•

Low on-resistance
R

DS(on)

= 6 m

Ω

typ.

•

Low drive current

•

4 V gate drive device can be driven from 5 V source

Outline

RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)

1. Gate
2. Drain
(Flange)
3. Source

Summary of Contents for 2SK3069

Page 1: ...itching REJ03G1062 1100 Previous ADE 208 694I Rev 11 00 Sep 07 2005 Features Low on resistance RDS on 6 m typ Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Pack...

Page 2: ...urce leak current IGSS 0 1 A VGS 20 V VDS 0 Zero gate voltage drain current IDSS 10 A VDS 60 V VGS 0 Gate to source cutoff voltage VGS off 1 0 2 5 V ID 1 mA VDS 10 V Note 4 6 0 7 5 m ID 40 A VGS 10 V...

Page 3: ...o Source Voltage Drain to Source Saturation Voltage V DS on V Drain Current ID A Static Drain to Source on State Resistance vs Drain Current Static Drain to Source on State Resistance R DS on m 200 15...

Page 4: ...tics Gate Charge Qg nc Drain to Source Voltage V DS V Gate to Source Voltage V GS V Switching Characteristics Switching Time t ns Drain Current ID A 20 16 12 8 4 50 0 50 100 150 200 0 VGS 10 V 4 V Pul...

Page 5: ...ain Current I DR A Reverse Drain Current vs Source to Drain Voltage D U T Rg IAP Monitor VDS Monitor VDD 50 Vin 15 V 0 ID VDS IAP V BR DSS L VDD EAR L IAP 2 2 1 VDSS VDSS VDD Avalanche Test Circuit Av...

Page 6: ...2SK3069 Rev 11 00 Sep 07 2005 page 6 of 7 Vin Monitor D U T Vin 10 V RL VDD 30 V tr td on Vin 90 90 10 10 Vout td off Vout Monitor 50 90 10 tf Switching Time Test Circuit Switching Time Waveforms...

Page 7: ...5 Max 9 5 8 0 1 27 6 4 0 2 0 1 3 6 0 1 0 08 Package Name PRSS0004AC A TO 220AB TO 220ABV MASS Typ 1 8g SC 46 RENESAS Code JEITA Package Code Unit mm Ordering Information Part Name Quantity Shipping C...

Page 8: ...or other loss resulting from the information contained herein 5 Renesas Technology Corp semiconductors are not designed or manufactured for use in a device or system that is used under circumstances...