Philips TZA3046 Product Data Sheet Download Page 13

Page: 13 / 15

TZA3046_1

Product data sheet

Rev. 01 — 19 May 2006

13 of 15

Philips Semiconductors

TZA3046

Fiber Channel/Gigabit Ethernet transimpedance amplifier

14. Handling information

14.1 General

Inputs and outputs are protected against electrostatic discharge in normal handling.
However, to be completely safe you must take normal precautions appropriate to handling
MOS devices; see

JESD625-A and/or IEC61340-5.

14.2 Additional information

Pad IPHOTO has limited protection to ensure good RF performance. This pad should be
handled with extreme care.

15. Abbreviations

16. Revision history

Table 6.

Abbreviations

Acronym

Description

BER

Bit Error Rate

FTTx

Fiber To The “x”

OC3

Optical Carrier level 3 (155.52 Mbit/s)

Positive Intrinsic Negative

PSRR

Power Supply Rejection Ratio

RSSI

Received Signal Strength Indicator

SDH

Synchronous Digital Hierarchy

SFP

Small Form-factor Pluggable

SONET

Synchronous Optical NETwork

STM1

Synchronous Transport Module 1 (155.52 Mbit/s

Table 7.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

TZA3046_1

20060519

Product data sheet

Summary of Contents for TZA3046

Page 1: ...nge typically 2 5 µA to 1 7 mA p p n Differential transimpedance of 7 5 kΩ typical n Bandwidth from DC to 1050 MHz typical n Differential outputs n On chip AGC with possibility of external control n Single supply voltage 3 3 V range 2 97 V to 3 6 V n Bias voltage for PIN diode n On chip current mirror of average photo current for RSSI monitoring n Identical ports available on both sides of die for...

Page 2: ... 1 Ordering information Type number Package Name Description Version TZA3046U bare die dimensions approximately 0 82 mm 1 3 mm Fig 1 Block diagram 290 Ω OUTQ AGC GND OUT VCC GAIN CONTROL BIASING PEAK DETECTOR TZA3046 DPHOTO CDREF CVCC low noise amplifier single ended to differential converter output buffers 7 or 13 8 or 14 IDREF_MON 5 or 16 DREF IDREF 0 2 IDREF IIDREF_MON IPIN RDREF 1 or 3 9 10 11...

Page 3: ...or PIN diode connect cathode of PIN diode to pad 1 or pad 3 IPHOTO 2 493 6 0 input current input anode of PIN diode should be connected to this pad DREF 3 493 6 140 output bias voltage output for PIN diode connect cathode of PIN diode to pad 1 or pad 3 VCC 4 353 6 278 6 supply supply voltage connect supply voltage to pad 4 or pad 17 IDREF_MON 5 213 6 278 6 output current output for RSSI measuremen...

Page 4: ...unt of Consecutive Identical Digits CID will not effect the output waveform A differential amplifier converts the output of the preamplifier to a differential voltage 7 1 PIN diode connections The performance of an optical receiver is largely determined by the combined effect of the transimpedance amplifier and the PIN diode In particular the method used to connect the PIN diode to the input pad I...

Page 5: ...RR and should have a minimum value of 470 pF Increasing this value improves the value of PSRR The current through RDREF is measured and sourced at pad IDREF_MON see Section 7 3 If the biasing for the PIN diode is done external to the IC pad DREF can be left unconnected If a negative bias voltage is used the configuration shown in Figure 4 can be used In this configuration the direction of the sign...

Page 6: ...peak detector and a gain control circuit The peak detector detects the amplitude of the signal and stores it in a hold capacitor The hold capacitor voltage is compared to a threshold voltage The AGC is only active when the input signal level is larger than the threshold level and is inactive when the input signal is smaller than the threshold level When the AGC is inactive the transimpedance is at...

Page 7: ...used if necessary 7 3 Monitoring RSSI via IDREF_MON To facilitate RSSI monitoring in modules e g SFF 8472 compliant SFP modules a current output is provided This output gives a current which is 20 of the average DREF current through the 290 Ω bias resistor By connecting a resistor to the IDREF_MON output a voltage proportional to the average input power can be obtained The RSSI monitoring is imple...

Page 8: ...lues at Tj 25 C and VCC 3 3 V minimum and maximum values are valid over the entire ambient temperature range and supply voltage range all voltages are measured with respect to ground unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit VCC supply voltage 2 97 3 3 3 6 V ICC supply current AC coupled RL dif 100 Ω excluding IDREF and IIDREF_MON 21 23 mA Ptot total power dissipation...

Page 9: ... V IIDREF_MON IDREF monitor current ratio ratio IIDREF_MON IDREF 19 5 20 20 5 Ioffset mon monitor offset current Tamb 25 C 0 10 20 µA TCI offset mon temperature coefficient of monitor offset current 30 nA C Data outputs pads OUT and OUTQ VO cm common mode output voltage AC coupled RL dif 100 Ω VCC 1 2 V Vo dif p p peak to peak differential output voltage AC coupled RL dif 100 Ω IPIN 2 5 µA p p Rtr...

Page 10: ...ailable for OUT and OUTQ The outputs should be used in pairs pad 14 with pad 7 or pad 8 with pad 13 Pad 8 is internally connected with pad 14 pad 7 is internally connected with pad 13 The device is guaranteed with only one pair used The other pair should be left open Two examples of the bonding possibilities are shown in Figure 8 Fig 8 Application diagram highlighting flexible pad lay out C OUT C ...

Page 11: ...onics N V 2006 All rights reserved Product data sheet Rev 01 19 May 2006 11 of 15 Philips Semiconductors TZA3046 Fiber Channel Gigabit Ethernet transimpedance amplifier 11 Test information Total impedance of the test circuit Ztot tc is calculated by the equation Ztot tc s21 R Zi 2 where s21 is the insertion loss of ports 1 and 2 Typical values R 330 Ω Zi 30 Ω Fig 9 Test circuit 001aae519 55 Ω 330 ...

Page 12: ...e Glass passivation 0 3 µm PSG PhosphoSilicate Glass on top of 0 8 µm silicon nitride Bonding pad dimension minimum dimension of exposed metallization is 90 µm 90 µm pad size 100 µm 100 µm except pads 2 and 3 which have exposed metallization of 80 µm 80 µm pad size 90 µm 90 µm Metallization 2 8 µm AlCu Thickness 380 µm nominal Die dimension 820 µm 1300 µm 20 µm2 Backing silicon electrically connec...

Page 13: ...nal information Pad IPHOTO has limited protection to ensure good RF performance This pad should be handled with extreme care 15 Abbreviations 16 Revision history Table 6 Abbreviations Acronym Description BER Bit Error Rate FTTx Fiber To The x OC3 Optical Carrier level 3 155 52 Mbit s PIN Positive Intrinsic Negative PSRR Power Supply Rejection Ratio RSSI Received Signal Strength Indicator SDH Synch...

Page 14: ...or illustrative purposes only Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification Limiting values Stress above one or more limiting values as defined in the Absolute Maximum Ratings System of IEC 60134 may cause permanent damage to the device Limiting values are stress ratings only and and ...

Page 15: ...tion 19 Contents 1 General description 1 2 Features 1 3 Applications 1 4 Ordering information 2 5 Block diagram 2 6 Pinning information 3 6 1 Pinning 3 6 2 Pin description 3 7 Functional description 4 7 1 PIN diode connections 4 7 2 Automatic gain control 6 7 3 Monitoring RSSI via IDREF_MON 7 8 Limiting values 8 9 Characteristics 8 10 Application information 10 11 Test information 11 12 Bare die i...

Search results

Summary of Contents for TZA3046

Reviews:

Related manuals for TZA3046

Brands by name

Popular brands

Philips TZA3046, Product Data Sheet

Search results

Summary of Contents for TZA3046

Reviews:

Related manuals for TZA3046

Brands by name

Popular brands