2000 Feb 09
9
Philips Semiconductors
Product specification
2
×
25 W high efficiency car radio power
amplifier
TDA1563Q
AC CHARACTERISTICS
V
P
= 14.4 V; R
L
= 4
Ω
; CSE = 1000
µ
F; f = 1 kHz; T
amb
= 25
°
C; measured in Fig.7; unless otherwise specified.
Notes
1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.
2. Frequency response externally fixed (input capacitors determine low frequency roll-off).
3. The SE to BTL switch voltage level depends on V
P
.
4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage is independent of R
s
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
P
o
output power
THD = 0.5%
15
19
−
W
THD = 10%
23
25
−
W
EIAJ
−
38
−
W
V
P
= 13.2 V; THD = 0.5%
−
16
−
W
V
P
= 13.2 V; THD = 10%
−
20
−
W
THD
total harmonic distortion
P
o
= 1 W; note 1
−
0.1
−
%
P
d
dissipated power
see Figs 10 and 11
W
B
p
power bandwidth
THD = 1%; P
o
=
−
1 dB
with respect to 15 W
−
20 to 15 000
−
Hz
f
ro(l)
low frequency roll-off
−
1 dB; note 2
−
25
−
Hz
f
ro(h)
high frequency roll-off
−
1 dB
130
−
−
kHz
G
v
closed loop voltage gain
P
o
= 1 W
25
26
27
dB
SVRR
supply voltage ripple rejection
R
s
= 0
Ω
; V
ripple
= 2 V (p-p)
on/mute
45
65
−
dB
standby; f = 100 Hz to 10 kHz 80
−
−
dB
CMRR
common mode rejection ratio
R
s
= 0
Ω
−
80
−
dB
Z
i
input impedance
90
120
150
k
Ω
∆
Z
i
mismatch in input impedance
−
1
−
%
V
SE-BTL
SE to BTL switch voltage level
note 3
−
3
−
V
V
o(mute)
output voltage mute (RMS value)
V
i
= 1 V (RMS)
−
100
150
µ
V
V
n(o)
noise output voltage
on; R
s
= 0
Ω
; note 4
−
100
150
µ
V
on; R
s
= 10 k
Ω
; note 4
−
105
−
µ
V
mute; note 5
−
100
150
µ
V
α
cs
channel separation
R
s
= 0
Ω
; P
o
= 15 W
40
70
−
dB
∆
G
v
channel unbalance
−
−
1
dB