Philips Semiconductors
SA5211
Transimpedance amplifier (180 MHz)
Product specification
Rev. 03 — 07 October 1998
9 of 28
9397 750 07427
© Philips Electronics N.V. 2001. All rights reserved.
Fig 6.
Test circuit 8.
GND
2
Test Circuit 8
OUT +
OUT –
GND
1
IN
DUT
I
IN
(
µ
A)
5V
V
OUT
(V)
+
–
Typical Differential Output Voltage
vs Current Input
2.00
1.60
1.20
0.80
0.40
0.00
–0.40
–0.80
–1.20
–1.60
–2.00
–100
–80
–60
–40
–20
0
20
40
60
80
100
DIFFERENTIAL OUTPUT
V
O
L
T
A
GE (V)
CURRENT INPUT (
µ
A)
NE5211 TEST CONDITIONS
Procedure 1
R
T
measured at 15
µ
A
R
T
= (V
O1
– V
O2
)/(+15
µ
A – (–15
µ
A))
Where: V
O1
Measured at I
IN
= +15
µ
A
V
O2
Measured at I
IN
= –15
µ
A
Procedure 2
Linearity = 1 – ABS((V
OA
– V
OB
) / (V
O3
– V
O4
))
Where: V
O3
Measured at I
IN
= +30
µ
A
V
O4
Measured at I
IN
= –30
µ
A
Procedure 3
V
OMAX
= V
O7
– V
O8
Where: V
O7
Measured at I
IN
= +65
µ
A
V
O8
Measured at I
IN
= –65
µ
A
Procedure 4
I
IN
Test Pass Conditions:
V
O7
– V
O5
> 20mV and V
06
– V
O5
> 50mV
Where: V
O5
Measured at I
IN
= +40
µ
A
V
O6
Measured at I
IN
= –400
µ
A
V
O7
Measured at I
IN
= +65
µ
A
V
O8
Measured at I
IN
= –65
µ
A
SD00331
V
OB
= R
T
×
(– 30
µ
A) + V
OB
V
OA
= R
T
×
(+ 30
µ
A) + V
OB