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Philips Semiconductors

Product specification

 Logic level TOPFET

PIP3119-P 

 

 

MECHANICAL DATA

Fig.2.  SOT78B (TO220AB) package

1

, pin 2 connected to mounting base.

 REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

 IEC

 JEDEC

 EIAJ

 SOT78B

D

D1

q

L

1

2

3

L1

b1

e

e

b

(1)

0

5

10 mm

scale

Plastic single-ended package; heatsink mounted; 1 mounting hole;  3-leads

SOT78B

DIMENSIONS (mm are the original dimensions)

A

E

A1

c

Notes

1. The positional accuracy of the terminals is controlled within zone L1 max.
2. Mounting base configuration is not defined within the dimensions E and D

Q

L2

UNIT

A1

b1

D1

e

∅ 

p

mm

2.54

q

Q

A

b

(1)

D

c

L2

max.

3.0

3.8
3.6

4.3
4.1

15.0
13.5

3.30
2.79

3.0
2.7

2.6
2.2

w

0.4

0.7
0.4

15.8
15.2

0.85
0.60

1.3
1.0

4.5
4.1

1.39
1.27

6.4
5.9

10.3

9.7

L1

p1

E

L

01-02-22

mounting

base

(2)

w

M

 p

p1

Refer to mounting instructions for SOT78 (TO220) envelopes.  Epoxy meets UL94 V0 at 1/8".  Net mass: 2 g

May 2001

5

Rev 1.000

Summary of Contents for Logic level TOPFET PIP3119-P

Page 1: ...rent VIS 5 V 650 µA lamps motors solenoids heaters FEATURES FUNCTIONAL BLOCK DIAGRAM TrenchMOS output stage Current limiting Overload protection Overtemperature protection Protection latched reset by input 5 V logic compatible input level Control of output stage and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro controller ESD pr...

Page 2: ... MOSFET is actively turned on to clamp overvoltage transients SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Inductive load turn off IDM 20 A VDD 20 V EDSM Non repetitive clamping energy Tmb 25 C 350 mJ EDRM Repetitive clamping energy Tmb 95 C f 250 Hz 45 mJ OVERLOAD PROTECTION LIMITING VALUE With an adequate protection supply provided via the input pin TOPFET can protect itself from two types of overlo...

Page 3: ...ce IDM 10 A 52 mΩ Tmb 25 C 22 28 mΩ OVERLOAD CHARACTERISTICS VIS 5 V Tmb 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Short circuit load ID Drain current limiting VDS 13 V 28 5 43 57 A 4 4 V VIS 5 5 V 21 65 A 40 C Tmb 150 C Overload protection PD TO Overload power threshold device trips if PD PD TO 75 185 250 W TDSC Characteristic time which determines trip time1 20...

Page 4: ...S 5 V 200 400 650 µA VIS 3 V 130 250 430 µA VISR Protection reset voltage1 reset time tr 100 µs 1 5 2 2 9 V tlr Latch reset time VIS1 5 V VIS2 1 V 10 40 100 µs V CL IS Input clamping voltage II 1 5 mA 5 5 8 5 V RIG Input series resistance2 Tmb 25 C 33 kΩ to gate of power MOSFET SWITCHING CHARACTERISTICS Tmb 25 C VDD 13 V resistive load RL 4 Ω Refer to waveform figure and test circuit SYMBOL PARAME...

Page 5: ...DIMENSIONS mm are the original dimensions A E A1 c Notes 1 The positional accuracy of the terminals is controlled within zone L1 max 2 Mounting base configuration is not defined within the dimensions E and D Q L2 UNIT A1 b1 D1 e p mm 2 54 q Q A b 1 D c L2 max 3 0 3 8 3 6 4 3 4 1 15 0 13 5 3 30 2 79 3 0 2 7 2 6 2 2 w 0 4 0 7 0 4 15 8 15 2 0 85 0 60 1 3 1 0 4 5 4 1 1 39 1 27 6 4 5 9 10 3 9 7 L1 p1 E...

Page 6: ...racteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 2001 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the...

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