Philips Semiconductors
Product specification
TOPFET high side switch
BUK215-50Y
SMD version of BUK210-50Y
STATIC CHARACTERISTICS
Limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Clamping voltages
V
BG
Battery to ground
I
G
= 1 mA
50
55
65
V
V
BL
Battery to load
I
L
= I
G
= 1 mA
50
55
65
V
-V
LG
Negative load to ground
I
L
= 10 mA
18
23
28
V
-V
LG
Negative load voltage
1
I
L
= 10 A; t
p
= 300
µ
s
20
25
30
V
Supply voltage
battery to ground
V
BG
Operating range
2
5.5
-
35
V
Currents
9 V
≤
V
BG
≤
16 V
I
B
Quiescent current
3
V
LG
= 0 V
-
-
20
µ
A
T
mb
= 25˚C
-
0.1
2
µ
A
I
L
Off-state load current
4
V
BL
= V
BG
-
-
20
µ
A
T
mb
= 25˚C
-
0.1
1
µ
A
I
G
Operating current
5
I
L
= 0 A
-
2
4
mA
I
L
Nominal load current
6
V
BL
= 0.5 V
T
mb
= 85˚C
9
-
-
A
Resistances
V
BG
I
L
t
p
7
T
mb
R
ON
On-state resistance
9 to 35 V
10 A
300
µ
s
25˚C
-
28
38
m
Ω
150˚C
-
-
70
m
Ω
R
ON
On-state resistance
6 V
10 A
300
µ
s
25˚C
-
36
48
m
Ω
150˚C
-
-
88
m
Ω
R
G
Internal ground resistance
I
G
= 10 mA
95
150
190
Ω
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.
7 The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
May 2001
3
Rev 1.010
