Transistors
1
Publication date: June 2007
SJC00369AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5632G
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
■
Features
•
High transition frequency f
T
•
S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
100
µ
A, I
E
=
0
15
V
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
=
2 V, I
C
=
0
2
µ
A
Forward current transfer ratio
h
FE
V
CE
=
4 V, I
C
=
2 mA
100
350
h
FE
ratio
*
∆
h
FE
h
FE2
: V
CE
=
4 V, I
C
=
100
µ
A
0.6
1.5
h
FE1
: V
CE
=
4 V, I
C
=
2 mA
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
20 mA, I
B
=
4 mA
0.1
V
Transition frequency
f
T
V
CE
=
5 V, I
C
=
15 mA, f
=
200 MHz
0.6
1.1
GHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
1.0
1.6
pF
(Common base, input open circuited)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
8
V
Emitter-base voltage (Collector open)
V
EBO
3
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *:
∆
h
FE
=
h
FE2
/ h
FE1
■
Package
•
Code
SMini3-F2
•
Marking Symbol: 2R
•
Pin Name
1: Base
2: Emitter
3: Collector
