Panasonic Schottky Barrier Diodes MA3Z792DG, Specifications

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2
MA3Z792DG, MA3Z792EG
SKH00215BED
This product complies with the RoHS Directive (EU 2002/95/EC).
I
F

V
F
I
R

V
R
V
F

T
a
I
R

T
a
C
t

V
R
10
−
2
0 0.1 0.2 0.3 0.4 0.5 0.6
10
−
1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA
)
T
a
=
125
°
C
−
20
°
C
75
°
C 25
°
C
10
−
1
0 5 10 15 20 25 30
1
10
10
2
10
3
10
4
Reverse voltage V
R
(V)
Reverse current I
R
(
µ
A
)
T
a
=
125
°
C
75
°
C
25
°
C
10
−
1
−
40 0 40 80 120 160 200
1
10
10
2
10
3
10
4
Ambient temperature T
a
(
°
C)
Reverse current I
R
(
µ
A
)
V
R
=
30 V
3 V
1 V
0
24
20
16
12
8
4
0 5 10 15 20 25 30
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF
)
f
=
1 MHz
T
a
=
25
°
C
0
0.2
0.4
0.6
0.8
1.0
−
40 0 40 80 120 160 200
Ambient temperature T
a
(
°
C)
Forward voltage V
F
(V
)
I
F
=
100 mA
10 mA
3 mA
I
F(AV)

T
a
0
20
40
60
120
100
80
140
0
DC
60 40 20 180 160 120 140 100 80
Ambient temperature T
a
(
°
C)
T
j
=
125
°
C
Forward current (Average) I
F(AV)
(m
A
)