Schottky Barrier Diodes (SBD)
1
Publication date: November 2003
SKH00129AED
MA27E02
Silicon epitaxial planar type
For cellular phone
■
Features
•
High-frequency wave detection is possible.
•
Low forward voltage V
F
•
Small terminal capacitance C
t
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
20
V
Maximum peak reverse voltage
V
RM
20
V
Forward current
I
F
35
mA
Peak forward current
I
FM
100
mA
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
=
1 mA
0.40
V
V
F2
I
F
=
35 mA
1.0
V
Reverse current
I
R
V
R
=
15 V
200
nA
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
1.2
pF
Forward dynamic resistance
r
f
I
F
=
5 mA
9
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Marking Symbol: G
Unit: mm
5
°
5
°
0.27
2
1
1.40
±0.05
0.52
±0.03
1.00
±0.05
0.60
±0.05
0.15 min.
0 to 0.01
0.15 min.
0.15 max.
+0.05
–0.02
0.13
+0.05
–0.02
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 2 GHz
1: Anode
2: Cathode
SSSMini2-F2 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
