background image

 

UP05C8GF

 

SJJ00352BED 

3

 

This product complies with the RoHS Directive (EU 2002/95/EC).

 

P

T

 

 T

a

 

I

C

 

 V

CE

 

I

C

 

 I

B

 

I

C

 

 V

BE

 

V

CE(sat)

 

 I

C

 

h

FE

 

 I

C

 

I

P

 

 V

DS

0

40

80

120

0

120

80

40

To

tal power dissipation  

P

T

  (

mW

)

Ambient temperature  T

a

  (

°

C)

UN05C8GF_P

T

-T

a

0

4

8

12

0

8

12

4

Collector current  

I

C

  (

mA

)

Collector-emitter voltage  V

CE

  (V)

UP05C8GF_I

C

-V

CE

80 

µ

A

40 

µ

A

20 

µ

A

T

a

 

=

 25

°

C

I

B

 

=

 100 

µ

A

60 

µ

A

0

0.4

0.8

0

40

20

Collector current  

I

C

  (

mA

)

Base current  I

B

  (A)

UP05C8GF_I

C

-I

B

V

CE

 

=

 6 V

0

0.4

1.2

0.8

0

40

50

10

20

30

Collector current  

I

C

  (

mA

)

Base-emitter voltage  V

BE

  (V)

UP05C8GF_I

C

-V

BE

V

CE

 

=

 6 V

T

a

 

=

 85

°

C

25

°

C

25

°

C

10

1

1

10

10

2

10

1

1

10

2

UP05C8GF_

V

CE(sat)

-

I

C

Collector

-emitter saturation voltage  

V

CE(sat)

  (V)

Collector current  I

C

  (mA)

I

C

 / I

B

 = 10

T

a

 = 85

°

C

25

°

C

25

°

C

1

10

10

2

120

160

80

40

0

UP05C8GF_

h

FE

-

I

C

Forward current transfer ratio  

h

FE

Collector current  I

C

  (mA)

T

a

 = 85

°

C

25

°

C

25

°

C

0

4

8

12

16

0

4

2

Peak current  

I

P

  (

mA

)

Drain-source voltage  V

DS

  (V)

UN05C8GF_I

P

-V

DS

Summary of Contents for Multi Chip Discrete UP05C8GF

Page 1: ...oad device Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Tr Collector base voltage Emitter open VCBO 30 V Collector emitter voltage Base open VCEO 20 V Emitter base voltage Collector open VEBO 3 V Collector current IC 50 mA CCD loaddevice Limiting element voltage Vmax 40 V Limiting element current Imax 10 mA Overall Total power dissipation PT 125 mW Junction temperature Tj 125 C St...

Page 2: ...urrent transfer ratio hFE VCE 10 V IC 2 mA 100 250 Transition frequency fT VCB 10 V IE 15 mA f 200 MHz 1300 MHz Power gain PG VCB 10 V IE 1 mA f 100 MHz 20 dB Note 1 Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors 2 Pulse measurement CCD Load Device Parameter Symbol Conditions Min Typ Max Unit Pinchi off current IP VDS 10 V VG 0 3 8 5 2 mA O...

Page 3: ...0 µA 0 0 4 0 8 0 40 20 Collector current I C mA Base current IB A UP05C8GF_IC IB VCE 6 V 0 0 4 1 2 0 8 0 40 50 10 20 30 Collector current I C mA Base emitter voltage VBE V UP05C8GF_IC VBE VCE 6 V Ta 85 C 25 C 25 C 10 1 1 10 102 10 1 1 10 2 UP05C8GF_VCE sat IC Collector emitter saturation voltage V CE sat V Collector current IC mA IC IB 10 Ta 85 C 25 C 25 C 1 10 102 120 160 80 40 0 UP05C8GF_hFE IC ...

Page 4: ...00352BED This product complies with the RoHS Directive EU 2002 95 EC SSMini6 F2 Unit mm 1 60 0 05 0 20 0 05 0 02 6 5 4 1 2 3 1 60 0 05 1 20 0 05 1 00 0 05 0 5 0 5 5 0 55 0 05 0 to 0 05 0 27 0 13 0 05 0 02 5 0 20 0 05 ...

Page 5: ...ard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing your equipmen...

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